Operational Amplifier. HS-5104ARH Datasheet

HS-5104ARH Amplifier. Datasheet pdf. Equivalent

Part HS-5104ARH
Description Radiation Hardened Low Noise Quad Operational Amplifier
Feature DATASHEET Radiation Hardened, Low Noise Quad Operational Amplifiers HS-5104ARH, HS-5104AEH The HS-.
Manufacture Intersil Corporation
Datasheet
Download HS-5104ARH Datasheet




HS-5104ARH
DATASHEET
Radiation Hardened, Low Noise Quad Operational
Amplifiers
HS-5104ARH, HS-5104AEH
The HS-5104ARH, HS-5104AEH are radiation hardened,
monolithic quad operational amplifiers that provide highly
reliable performance in harsh radiation environments.
Excellent noise characteristics coupled with a unique array of
dynamic specifications make these amplifiers well-suited for a
variety of satellite system applications. Dielectrically isolated,
bipolar processing makes these devices immune to Single
Event Latch-Up.
The HS-5104ARH, HS-5104AEH show almost no change in offset
voltage after exposure to 100kRAD(Si) gamma radiation, with
only a minor increase in current. Complementing these
specifications is a post radiation open loop gain in excess of 40k.
These quad operational amplifiers are available in an industry
standard pinout, allowing for immediate interchangeability
with most other quad operational amplifiers.
Features
• Electrically screened to SMD # 5962-95690
• QML qualified per MIL-PRF-38535 requirements
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)
• No latch-up, dielectrically isolated device islands
• Low noise
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/Hz (Typ)
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/Hz (Typ)
• Low offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 3.0mV (Max)
• High slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V/µs (Typ)
• Gain bandwidth product . . . . . . . . . . . . . . . . . . . .8.0MHz (Typ)
Applications
• High Q, active filters
• Voltage regulators
• Integrators
• Signal generators
• Voltage references
• Space environment
Ordering Information
ORDERING/SMD NUMBER
INTERNAL
MKT. NUMBER
(NOTE 1 )
TEMP. RANGE
(°C)
PART
MARKING
PACKAGE
(RoHS Compliant)
(NOTE 2)
PKG. DWG. #
5962R9569001VXC
HS9-5104ARH-Q
-55 to +125
Q 5962R95 69001VXC 14 Ld Flatpack
K14.A
5962R9569002VXC
HS9-5104AEH-Q
-55 to +125
Q 5962R95 69002VXC 14 Ld Flatpack
K14.A
5962R9569001VCC
HS1-5104ARH-Q
-55 to +125
Q 5962R95 69001VCC 14 Ld SBDIP
D14.3
5962R9569002VCC
HS1-5104AEH-Q
-55 to +125
Q 5962R95 69002VCC 14 Ld SBDIP
D14.3
5962R9569001V9A
HS0-5104ARH-Q
-55 to +125
Die
5962R9569002V9A
HS0-5104AEH-Q
-55 to +125
Die
HS1-5104ARH/PROTO
HS1-5104ARH/PROTO
-55 to +125
HS1-5104ARH/PROTO 14 Ld SBDIP
D14.3
HS0-5104ARH/SAMPLE
HS0-5104ARH/SAMPLE
-55 to +125
Die
HS9-5104ARH/PROTO
HS9-5104ARH/PROTO
-55 to +125
HS9-5104ARH/PROTO 14 Ld Flatpack
K14.A
1. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in
the“Ordering Information” table must be used when ordering.
2. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
July 12, 2013
FN3025.5
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas LLC 2002, 2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.



HS-5104ARH
HS-5104ARH, HS-5104AEH
Pin Configuration
HS1-5104ARH, HS1-5104AEH
(14 LD SBDIP)
TOP VIEW
HS9-5104ARH, HS9-5104AEH
(14 LD FLATPACK)
TOP VIEW
OUT 1 1
-IN1 2
+IN1 3
V+ 4
+IN2 5
-IN2 6
OUT 2 7
14 OUT 4
13 -IN4
12 +IN4
11 V-
10 +IN3
9 -IN3
8 OUT 3
OUT 1
-IN1
+IN1
V+
+IN2
-IN2
OUT 2
1 14
2 13
3 12
4 11
5 10
69
78
OUT 4
-IN4
+IN4
V-
+IN3
-IN3
OUT 3
Irradiation Circuit
+15V
+-
-15V
(ONE OF FOUR)
NOTES:
3. +V = 15V
4. -V = -15V
5. Group E Sample Size = 4 Die Per Wafer
Burn In Circuit
+V
C1
1
R1
2
1
+-
3
4
D1 R2
5
2
6 +-
7
14
4
+-
13
R4
12
11
3
R3
10
+- 9
8
-V
D2 C2
NOTES:
6. R1 = R2 = R3 = R4 = 1MW, 5%, 1/4W (Min)
7. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
8. D1 = D2 = IN4002 or Equivalent/Board
9. |(V+) - (V-)| = 31V ±1V
2 FN3025.5
July 12, 2013







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