Transistor Array. HS1-6254RH Datasheet

HS1-6254RH Array. Datasheet pdf. Equivalent

Part HS1-6254RH
Description Radiation Hardened Ultra High Frequency NPN Transistor Array
Feature HS-6254RH Data Sheet August 1999 File Number 4425.2 Radiation Hardened Ultra High Frequency NPN Tra.
Manufacture Intersil Corporation
Datasheet
Download HS1-6254RH Datasheet



HS1-6254RH
Data Sheet
HS-6254RH
August 1999 File Number 4425.2
Radiation Hardened Ultra High Frequency
NPN Transistor Array
The HS-6254RH is a Radiation Hardened array of five NPN
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes provides
an immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
The high FT (8GHz) and low noise figure (3.5dB) of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the five transistors provides the closest electrical and
thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-97641. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinouts
HS1-6254RH (CERDIP) GDIP1-T16 OR
HS1-6254RH (SBDIP) CDIP2-T16
TOP VIEW
Q1C 1
Q2C 2
Q2E 3
Q2
Q2B 4
NC 5
Q3C 6
Q3E 7
Q3
Q3B 8
16 Q1E
Q1
15 Q1B
14 Q5B
13 Q5E
Q5 12 Q5C
11 Q4C
10 Q4E
Q4 9 Q4B
Features
• Electrically Screened to SMD # 5962-97641
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si)
- SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation
• Gain Bandwidth Product (FT) . . . . . . . . . . . . . .8GHz (Typ)
• Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)
• Early Voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)
• Noise Figure (50) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note 9315
• High Frequency Converters
• Synchronous Detectors
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(oC)
HS0-6254RH-Q
HS0-6254RH-Q
25
5962F9764101VEA
HS1-6254RH-Q
-55 to 125
5962F9764101VEC
HS1B-6254RH-Q
-55 to 125
5962F9764101VXC
HS9-6254RH-Q
-55 to 125
HS1-6254RH/SAMPLE HS1-6254RH/SAMPLE -55 to 125
Q1C
Q2C
Q2E
Q2B
NC
Q3C
Q3E
Q3B
HS9-6254RH (FLATPACK) CDFP4-F16
TOP VIEW
1 16
2 Q1 15
3 14
4 Q2
13
5 12
6 Q5 11
7 10
8 Q3
Q4 9
Q1E
Q1B
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999



HS1-6254RH
Burn-In Circuit
HS-6254RH
100 ±5%
10.5V ±0.5V
5.5V ±0.5V
0.01µF
1K ±5%
1K ±5%
1
2
3
Q2
4
NC 5
6
7
Q3
8
16
Q1
15
14
13
Q5 12
11
10
Q4
9
0.01µF
1K ±5%
1K ±5%
1K ±5%
Irradiation Circuit
100Ω ±5%
10.5V ±0.5V
1
2
1K ±5%
3
Q2
4
NC 5
6
1K ±5%
7
Q3
8
5V ±0.5V
0.01µF
16
Q1
15
14
13
Q5 12
11
10
Q4
9
0.01µF
1K ±5%
1K ±5%
1K ±5%
2







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