HS1-6617RH-T

HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HS-6617RH-T is a radiation hardened 16k CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design techniques combine with CMOS processing to give this device high speed performance with very low power dissipation. On chip address latches are provided, allowing easy interfacing with recent generation microprocessors that use multiplexed address/data bus structure, such as the HS-80C86RH. The output enable control (G) simplifies microprocessor system interfacing by allowing output data bus control, in addition to, the chip enable control. Synchronous operation of the HS-6617RH-T is ideal for high speed pipe-lined architecture systems and also in synchronous logic replacement functions. Features QML Class T, Per MIL-PRF-38535 Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2 Field Programmable Nicrome Fuse Links Low Standby Power 1.1mW Max Low Operating Power 137.5mW/M...