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HS7541AAP Dataheets PDF



Part Number HS7541AAP
Manufacturers Sipex Corporation
Logo Sipex Corporation
Description 12-Bit CMOS Multiplying DAC
Datasheet HS7541AAP DatasheetHS7541AAP Datasheet (PDF)

® HS7541A 12–Bit CMOS Multiplying DAC s ±0.5 LSB DNL and INL s High Stability, Segmented Architecture (3 MSB’s) s Proprietary, Low TCR Thin–Film Resistor Technology s Low Sensitivity to Output Amplifier Offset s 2KV ESD Protection on All Digital Inputs s Operates With +5V to +15V Power Supplies s AD7541/7541A Replacement s Low Cost DESCRIPTION… The HS7541A is a low–cost, high stability monolithic 12–bit CMOS 4–quadrant multiplying DAC. It is constructed using a proprietary low–TCR thin–film pr.

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® HS7541A 12–Bit CMOS Multiplying DAC s ±0.5 LSB DNL and INL s High Stability, Segmented Architecture (3 MSB’s) s Proprietary, Low TCR Thin–Film Resistor Technology s Low Sensitivity to Output Amplifier Offset s 2KV ESD Protection on All Digital Inputs s Operates With +5V to +15V Power Supplies s AD7541/7541A Replacement s Low Cost DESCRIPTION… The HS7541A is a low–cost, high stability monolithic 12–bit CMOS 4–quadrant multiplying DAC. It is constructed using a proprietary low–TCR thin–film process that requires no laser–trimming to achieve 12–bit performance. The HS7541A is a superior pin–compatible replacement for the industry standard 7541 and AD7541A. It is available in both commercial and industrial temperature ranges. It operates with +5V to +15V power supply voltages. It is available in 18– pin plastic DIP and SOIC, and 20–pin PLCC packages. VREF [17] D11 (MSB) [4] D10 [5] D9 [6] D8 [7] D7 [8] D6 [9] D5 [10] D4 [11] D3 [12] D2 [13] D1 [14] D0 (LSB) [15] 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 20KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 10KΩ 20KΩ IO2 [2] IO1 [1] 10KΩ VDD [16] GND [3] RFB [18] HS7541A 12-Bit CMOS Multiplying DAC © Copyright 2000 Sipex Corporation 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) These are stress ratings only and functional operation of the device at these or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. VDD to GND .................................................................. –0.3V, +17V Digital Input Voltage to GND ................................. –0.3V, VDD+0.3V VREF or VRFB to GND ................................................................ ±25V Output Voltage (Pin 1, Pin 2) ................................ –0.3V, VDD+0.3V Power Dissipation (Any Package to +75°C) ........................ 450mW Derates above 75°C by ...................................................... 6mW/°C Dice Junction Temperature ................................................. +150°C Storage Temperature ............................................ –65 °C to +150°C Lead Temperature (Soldering, 60 seconds) ........................ +300°C CAUTION: ESD (ElectroStatic Discharge) sensitive device. Permanent damage may occur on unconnected devices subject to high energy electrostatic fields. Unused devices must be stored in conductive foam or shunts. Personnel should be properly grounded prior to handling this device. The protective foam should be discharged to the destination socket before devices are removed. SPECIFICATIONS (TA=25°C; VDD =+15V, VREF = +10V; IO1 = IO2 = GND = 0V; unipolar unless otherwise noted.) PARAMETER STATIC PERFORMANCE Resolution Integral Non-Linearity -AJ, -AA -AK, -AB Differential Non-Linearity -AJ, -AA -AK, -AB Gain Error -AJ, -AA -AK, -AB Output Leakage Current MIN. 12 TYP. MAX. UNIT Bits CONDITIONS ±1.0 ±0.5 ±1.0 ±0.5 ±6 ±8 ±3 ±5 ±5 ±10 LSB LSB LSB LSB LSB LSB LSB LSB nA nA Note 6 Note 5; 11-bit relative accuracy Note 5; 12-bit relative accuracy Note 7 Note 5; Monotonic to 12-bits Note 5; Monotonic to 12-bits Note 17 Note 5 Note 5 At IO1 (Pin 1); Note 18 Note 5 Output Amplifier HOS-050; Note 8 Note 9 Full scale transition; Note 10 Note 5; data inputs VIH Note 5; data inputs VIH Note 5; data inputs VIL Note 5; data inputs VIL Note 11 Measured at output IO1; Note 12 Measured at output IO1; Note 13 AC PERFORMANCE CHARACTERISTICS Propagation Delay Current Settling Time Output Capacitance CIO1 (Pin 16) CIO2 (Pin 15) CIO1 (Pin 16) CIO2 (Pin 15) Glitch Energy Multiplying Feedthrough Error 100 0.6 200 70 70 200 1,000 1.0 0.1 ns µs pF pF pF pF nVs mVP-P mVP-P ppm/°C ppm/°C ppm/°C %/% KΩ ppm/°C Volts STABILITY Gain Error TC INL TC DNL TC Power Supply Rejection Ratio REFERENCE INPUT Input Resistance Input Resistance TC Voltage Range ±1.0 ±0.1 ±0.1 ±0.02 15 ±25 VDD = 14 to 16V Pin 19 to GND Note 5 and 14 7 10 ±150 HS7541A 12-Bit CMOS Multiplying DAC © Copyright 2000 Sipex Corporation 2 SPECIFICATIONS (continued) (TA=25°C; VDD =+15V, VREF = +10V; IO1 = IO2 = GND = 0V; unipolar unless otherwise noted.) PARAMETER DIGITAL INPUTS Logic Levels VIH VIL Input Current Input Capacitance Bits 1—12 Coding Unipolar Bipolar POWER REQUIREMENTS Voltage Range Supply Current MIN. TYP. MAX. UNIT CONDITIONS 2.4 -0.3 VDD 2.4 0.8 0.8 ±1.0 ±10 8 Binary Offset Binary Volts Volts Volts Volts µA µA pF Note 5 Note 5 VIN = 0V or VDD Note 5 and 15 VIN = 0; Note 5 and 14 Note 5 +5 2.0 0.2 +15 +16 2.5 2.5 0.5 1.0 Volts Volts mA mA mA mA Note 16 Note 5 All digital inputs VIL or VIH Note 5; all digital inputs VIL or VIH All digital inputs 0V or 5V to VDD Note 5; all digital inputs 0V or 5V to VDD ENVIRONMENTAL AND MECHANICAL Operating Temperature -AK, -AJ 0 +70 °C -AB, -AA -40 +85 °C Storage Temperature -65 +150 °C Package -AK, -AJ 18-pin plastic DIP, 20-pin PLCC, .


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