with Disable. HS9-1254RH-Q Datasheet

HS9-1254RH-Q Disable. Datasheet pdf. Equivalent

Part HS9-1254RH-Q
Description Radiation Hardened/ High Speed/ Low Power Dual Operational Amplifier with Disable
Feature HS-1254RH PRELIMINARY April 1998 Radiation Hardened, High Speed, Low Power Dual Operational Amplifie.
Manufacture Intersil Corporation
Datasheet
Download HS9-1254RH-Q Datasheet




HS9-1254RH-Q
HS-1254RH
PRELIMINARY
April 1998
Radiation Hardened, High Speed, Low Power
Dual Operational Amplifier with Disable
Features
Description
• QML Qualified Per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)
- SEL Immune . . . . . . . . . . . Bonded Wafer DI Process
• Low Quiescent Current (per amp) . . . . . . 6.1mA (Max)
• Disabled Supply Current (per amp) . . . . . 4.0mA (Max)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . 5.0mV (Max)
• Output Enable/Disable Time . . . . . . . 160ns/20ns (Typ)
• High Slew Rate . . . . . . . . . . . . . . . . . . . 1050V/µs (Typ)
• Wide -3dB Bandwidth (AV = +2) . . . . . . . 530MHz (Typ)
Applications
• High Speed A/D Drivers
• Cable Drivers
• Wideband Signal Switching and Routing
• Redundant Circuit Multiplexing
• Pulse Amplifiers
The HS-1254RH is a ±5V, Rad Hard, monolithic, dual,
current feedback amplifier that provides highly reliable
performance in harsh radiation environments. Dielectric
isolation and bonded wafer processing make this device
immune to latch-up (SEL).
Excellent dynamic characteristics, coupled with the disable
function, make this amplifier well-suited for a variety of satel-
lite system applications. The outputs have individual disable
control pins that make it easy to multiplex wideband signals,
putting the outputs in a high impedance mode and reducing
the supply current per op amp down to 3mA (typical).
Post radiation limits are fully specified and guaranteed to
300kRAD(Si) total dose to ensure predictable performance
in any space application.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC).
SMD numbers must be used when ordering.
Detailed Electrical Specifications for the HS-1254RH are
contained in SMD 5962-98581, which is easily down-
loadable from our website, via a DSCC “hot-link”.
http://www.semi.intersil.com/data/sm/index.htm
Ordering Information
SMD PART NUMBER
5962R9858101VXC
N/A
INTERSIL PART NUMBER
HS9-1254RH-Q
HS9-1254RH/Sample
TEMP. RANGE (oC)
-55 to 125
25
PACKAGE
14 Ld Flatpack
14 Ld Flatpack
Pinout
-IN1
+IN1
DISABLE 1
V-
DISABLE 2
+IN2
-IN2
HS-1254RH (FLATPACK)
TOP VIEW
1 14
2 13
3 12
4 11
5 10
69
78
OUT1
NC
GND
V+
NC
NC
OUT2
CASE OUTLINE
CDFP3-F14
CDFP3-F14
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4507



HS9-1254RH-Q
Die Characteristics
DIE DIMENSIONS
Size: 1750µm x 2330µm (69 mils x 92 mils)
Thickness: 483µm (19 mils)
GLASSIVATION
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
METALLIZATION
Metal 1
Type: AlCu(2%)/TiW
Thickness: 8kÅ ± 0.4kÅ
Metal 2
Type: AlCu(2%)
Thickness: 16kÅ ± 0.8kÅ
HS-1254RH
SUBSTRATE
DI, Bonded Wafer
BACKSIDE FINISH
Silicon
SUBSTRATE POTENTIAL
Floating (Recommend connection to V-)
TRANSISTOR COUNT:
180
Metallization Mask Layout
HS-1254RH
-IN1 OUT1 GND (SEE NOTE 1)
+IN1
V+
DISABLE1
V-
DISABLE2
NC
NC
+IN2
OUT2
-IN2 V-
NOTE:
1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V).
2







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