Analog Switch. HS9-303RH-8 Datasheet

HS9-303RH-8 Switch. Datasheet pdf. Equivalent

Part HS9-303RH-8
Description Radiation Hardened CMOS Dual SPDT Analog Switch
Feature HS-303RH TM Data Sheet November 2001 File Number 9046 Radiation Hardened CMOS Dual SPDT Analog .
Manufacture Intersil Corporation
Datasheet
Download HS9-303RH-8 Datasheet




HS9-303RH-8
TM
Data Sheet
HS-303RH
November 2001
File Number 9046
Radiation Hardened
CMOS Dual SPDT Analog Switch
The HS-303RH analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). This switch offers low-
resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30pre-rad and 35
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-303RH are
contained in SMD 5962-95813. A “hot-link” is provided from
our website for downloading
Ordering Information
ORDERING
NUMBER
5962R9581301QCC
5962R9581301QXC
5962R9581301VCC
5962R9581301VXC
HS1-303RH/PROTO
HS9-303RH/PROTO
PART
NUMBER
HS1-303RH-8
HS9-303RH-8
HS1-303RH-Q
HS9-303RH-Q
HS1-303RH/PROTO
HS9-303RH/PROTO
TEMP.
RANGE
(oC)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Features
• QML, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-303 Series Analog
Switches
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . 60(Max, Post Rad)
• Low Operating Power . . . . . . . . . . 100µA (Max, Post Rad)
Pinouts
HS1-303RH (SBDIP), CDIP2-T14
TOP VIEW
NC 1
S3 2
D3 3
D1 4
S1 5
IN1 6
GND 7
14 V+
13 S4
12 D4
11 D2
10 S2
9 IN2
8 V-
HS9-303RH (FLATPACK) CDFP3-F14
TOP VIEW
NC
S3
D3
D1
S1
IN1
GND
1
2
3
4
5
6
7
14
V+
13
S4
12
D4
11
D2
10
S2
9
IN2
8
V-
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001. All Rights Reserved



HS9-303RH-8
HS-303RH
Functional Diagram
IN N P
D
LOGIC
0
1
SBDIP TRUTH TABLE
SW1AND SW2 SW3 AND SW4
OFF
ON
ON OFF
Die Characteristics
DIE DIMENSIONS:
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
METALLIZATION:
Type: Al
Thickness: 12.5kÅ ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
Metallization Mask Layout
PASSIVATION:
Type: Silox (SiO2)
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
HS-303RH-T
D3 D4
D1 D2
S1 S2
IN1 IN2
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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