MOSFET Drivers. HS9-4424RH-Q Datasheet

HS9-4424RH-Q Drivers. Datasheet pdf. Equivalent

Part HS9-4424RH-Q
Description Radiation Hardened Dual/ Non-Inverting Power MOSFET Drivers
Feature HS-4424RH, HS-4424BRH Data Sheet June 1999 File Number 4739.1 Radiation Hardened Dual, Non-Invertin.
Manufacture Intersil Corporation
Datasheet
Download HS9-4424RH-Q Datasheet




HS9-4424RH-Q
Data Sheet
HS-4424RH, HS-4424BRH
June 1999 File Number 4739.1
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers
The Radiation Hardened HS-4424RH and HS-4424BRH are
non-inverting, dual, monolithic high-speed MOSFET drivers
designed to convert TTL level signals into high current
outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of
high gate capacitance power MOSFETs, like our Rad Hard
FS055, in high frequency applications.
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate
capacitance. The output stage incorporates a low voltage
lock-out circuit that puts the outputs into a three-state mode
when the supply voltage drops below 10V for the
HS-4424RH and 7.5V for the HS-4424BRH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99560. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
HS-4424RH, HS-4424BRH (FLATPACK CDFP4-F16)
TOP VIEW
NC
IN A
NC
GND A
GND B
NC
IN B
NC
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
NC
OUT A
OUT A
VCC
VCC
OUT B
OUT B
NC
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-
bonded to their same electrical points on the die.
Features
• Electrically Screened to DESC SMD # 5962-99560
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 105 RAD(SI)
- Latch-Up Immune
- Low Dose Rate Immune
• IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Min)
• Matched Rise and Fall Times (CL = 4300pF). . . 75ns (Max)
• Low Voltage Lock-Out Feature
- HS-4424RH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 10.0V
- HS-4424BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 7.5V
• Wide Supply Voltage Range. . . . . . . . . . . . . . . 12V to 18V
• Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (Max)
• Consistent Delay Times with VCC Changes
• Low Power Consumption
- 40mW with Inputs High
- 20mW with Inputs Low
• Low Equivalent Input Capacitance . . . . . . . . . .3.2pF (Typ)
• ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
5962F9956001VXC
HS9-4424RH-Q
5962F9956001QXC
HS9-4424RH-8
HS9-4424RH/Proto
HS9-4424RH/Proto
5962F9956002VXC
HS9-4424BRH-Q
5962F9956002QXC
HS9-4424BRH-8
HS9-4424BRH/Proto HS9-4424BRH/Proto
TEMP. RANGE
(oC)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999



HS9-4424RH-Q
HS-4424RH, HS-4424BRH
Die Characteristics
DIE DIMENSIONS:
4890µm x 3370µm (193 mils x 133 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
GND (5)
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
125
HS-4424RH, HS-4424BRH
GND (4)
IN B (7)
IN A (2)
OUT B (10)
OUT B (11)
VCC (12)
OUT A (15)
OUT A (14)
VCC (13)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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