HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : ...
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No. : 1/3
HSA733SP
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
The HSA733 is designed for use in driver stage of AF amplifier.
Features
High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA)
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -60 V VCEO Collector to Emitter Voltage.........................