HSB1109S

HI-SINCERITY MICROELECTRONICS CORP. HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2005.02.14 Page No. : 1/5 Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 900 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ............................................................................