Speed Switching. HSB124S Datasheet

HSB124S Switching. Datasheet pdf. Equivalent

Part HSB124S
Description Silicon Epitaxial Planar Diode for High Speed Switching
Feature HSB124S Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-488A(Z) Rev 1 Dec. 1999 Fea.
Manufacture Hitachi Semiconductor
Datasheet
Download HSB124S Datasheet

HSB124S Silicon Epitaxial Planar Diode for High Speed Switch HSB124S Datasheet
Recommendation Recommendation Datasheet HSB124S Datasheet





HSB124S
HSB124S
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-488A(Z)
Rev 1
Dec. 1999
Features
Low reverse current.(IR= 0.01µAmax)
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSB124S
Laser Mark
A1
Package Code
CMPAK
Outline
3
21
(Top View)
1 Cathode
2 Anode
3 Cathode
Anode



HSB124S
HSB124S
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak
forward surge current
VRM
VR
I *1
FM
I *2
FSM
85
80
300
4
Average rectified current
I
*1
O
Junction temperature
Tj
100
125
Storage temperature
Tstg
-55 to +125
Note: 1. Two device total.
Note: 2. Value at duration of 1µsec, two device total.
Unit
V
V
mA
A
mA
°C
°C
Electrical Characteristics (Ta = 25°C) *1
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
Reverse recovery
time
VF
IR
C
t rr
— — 1.2 V
IF = 100 mA
— — 0.01 µA VR = 80V
— — 4.0 pF VR = 0V, f = 1 MHz
— — 100 ns IF = 10 mA, VR = 6V, RL = 50
Note: 1. Per one device.
2





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