HSB124S

HSB124S Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-488A(Z) Rev 1 Dec. 1999 Features Low reverse current.(I R= 0.01 µAmax) CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB124S Laser Mark A1 Package Code CMPAK Outline 3 2 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) HSB124S Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Note: Symbol VRM VR I FM *1 *2 Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA °C °C I FSM I O*1 Tj Tstg 1. Two device total. 2. Value at duration of 1 µsec, two device total. Electrical Characteristics (Ta = 25°C) * 1 Item Forward voltage Reverse current Capacitance Reverse recovery time Note: Symbol VF IR C t rr Min — — — — Typ — — — — Max 1.2 0.01 4.0 100 Unit V µA pF ns Test Condition I F = 100 mA VR = 80V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V, RL = 50Ω 1. Per one device. 2 HSB124S Main Characteristic -2 -3 -9 10 10 10 Forward current IF 10 10 10 10 10 10 10 -5 -6 Reverse current I R (A) 0 0.2 0.4 0.6 0.8 1.0 (A) 10 -4 10 -10 -7 -8 10 -11 -9 10 -12 -10 -11 -13 10 0 20 40 60 80 100 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0...