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HSB226YP Dataheets PDF



Part Number HSB226YP
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Schottky Barrier Diode
Datasheet HSB226YP DatasheetHSB226YP Datasheet (PDF)

HSB226YP Silicon Schottky Barrier Diode ADE-208-842(Z) Rev. 0 Mar. 2000 Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB226YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junct.

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HSB226YP Silicon Schottky Barrier Diode ADE-208-842(Z) Rev. 0 Mar. 2000 Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB226YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Symbol VRRM Value 25 200 50 125 -55 to +125 Unit V mA mA °C °C IFSM *1*2 I F*2 Tj Tstg Notes: 1. 10msec sine wave 1 pulse Notes: 2. Two device total Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance IR C Min − − − − Typ − − − − Max 0.33 0.38 0.45 2.80 Unit V V µA pF Test Condition I F = 1 mA I F = 5 mA VR = 20V VR = 1V, f = 1 MHz Note: 1. Per one device 2 HSB226YP Main Characteristic 10 10 Forward current IF (A) 1 0 10 -4 Pulse test Ta=75°C 10 -2 -3 Ta=7°C Ta=25°C 10 10 10 10 10 10 Reverse current I R (A) 10 -1 10 -5 -4 -5 10 -6 Ta=25°C 10 -7 -6 -7 -8 0 0.2 0.4 0.6 0.8 1.0 10 -8 0 10 20 30 40 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 0.1 0.1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 3 HSB226YP Package Dimensions Unit: mm 2.0 – 0.2 1.3 – 0.2 0.3 – 0.05 0.3 – 0.05 0.425 0.65 0.65 0.16— 0.06 2.1 – 0.2 + 0.1 1.25 – 0.1 0 — 0.1 0.65 0.65 1.3 – 0.2 0.9 – 0.1 0.2 0.425 0.3 – 0.05 0.3 – 0.05 Hitachi Code JEDEC EIAJ Mass CMPAK-4 Conforms 0.006 g 4 HSB226YP Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electron.


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