Voltage Switching. HSB83 Datasheet

HSB83 Switching. Datasheet pdf. Equivalent

Part HSB83
Description Silicon Epitaxial Planar Diode for High Voltage Switching
Feature HSB83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-489A(Z) Rev 1 Nov. 1999 Fea.
Manufacture Hitachi Semiconductor
Datasheet
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HSB83
HSB83
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-489A(Z)
Rev 1
Nov. 1999
Features
High reverse voltage. (VR=250V)
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSB83
Laser Mark
F7
Package Code
CMPAK
Outline
3
21
(Top View)
1 NC
2 Anode
3 Cathode



HSB83
HSB83
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak
forward surge current
VRM
VR
I FM
I *1
FSM
Average rectified current IO
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. Value at duration of 10msec.
Value
300
250
300
2
100
125
-55 to +125
Unit
V
V
mA
A
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Reverse recovery
time
Symbol Min Typ Max Unit Test Condition
VF
— — 1.2 V
IF = 100 mA
IR1 — — 0.2 µA VR = 250V
IR2 — — 100
VR = 300V
C — — 3.0 pF VR = 0V, f = 1 MHz
trr — — 100 ns IF = IR =30 mA, Irr = 3mA, RL = 100
2





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