PLANAR TRANSISTOR. HSB857 Datasheet

HSB857 TRANSISTOR. Datasheet pdf. Equivalent

Part HSB857
Description PNP EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSB857 Datasheet

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HSB857
HI-SINCERITY
MICROELECTRONICS CORP.
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2005.10.07
Page No. : 1/4
Description
Low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C)
TO-220
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage........................................................................................................................ -70 V
BVCEO Collector to Emitter Voltage..................................................................................................................... -50 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current .............................................................................................................................................. -4 A
IC Collector Current (IC Peak)............................................................................................................................... -8 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min. Typ. Max.
-70 -
-
-50 -
-
-5 -
-
- - -1
- - -0.4
- - -1
35 -
-
60 - 320
- 15 -
Classification Of hFE2
Rank
B
hFE 60-120
Unit
V
V
V
uA
V
V
MHz
Test Conditions
IC=-10uA, IE=0
IC=-50mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IC=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-4V
IC=-0.1A, VCE=-4V
IC=-1A, VCE=-4V
VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
C
100-200
D
160-320
HSB857
HSMC Product Specification



HSB857
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2005.10.07
Page No. : 2/4
Current Gain & Collector Current
1000
10000
Saturation Voltage & Collector Current
hFE @ VCE=4V
100
10
1
1
10
100
1000
10000
Collector Current (mA)
1000
100
10
1
VBE(sat) @ IC=10IB
VBE(sat) @ IC=10IB
10 100 1000
Collector Current (mA)
10000
10000
On Voltage & Collector Current
1000
VBE(on) @ VCE=4V
100
1
10 100 1000
Collector Current (mA)
10000
Capacitance & Reverse-Biased Voltage
1000
100
10
0.1
HSB857
Cob
1 10
Reverse-Biased Voltage (V)
100
10.00
Switching Time & Collector Current
VCC=30V, IC=10IB1= -10IB2
1.00 Tstg
Tf
0.10
Ton
0.01
0.1
1.0
Collector Current (A)
10.0
100000
10000
1000
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
100
10
1
1 10
Forward Voltage-VCE (V)
100
HSMC Product Specification





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