HSB857D

HI-SINCERITY MICROELECTRONICS CORP. HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 Absolute Maximum Ratings (Ta=25°C) TO-126ML Maximum Temperatures Storage Temperature .............................................................................................. -50~+150 °C Junction Temperature .................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C).....................................................................................1.5 W Total Power Dissipation (Tc=25°C) ......................................................................................10 W Maximum Voltages and Currents BVCBO Collector to Base Voltage.......................................................................................-60 V BVCEO Collector to Emitter Volta...