Speed Switching. HSC119 Datasheet

HSC119 Switching. Datasheet pdf. Equivalent

Part HSC119
Description Silicon Epitaxial Planar Diode for High Speed Switching
Feature HSC119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-615 (Z) Rev 0 Apr. 1998 Feat.
Manufacture Hitachi Semiconductor
Datasheet
Download HSC119 Datasheet

HSC119 Silicon Epitaxial Planar Diode for High Speed Switchi HSC119 Datasheet
Recommendation Recommendation Datasheet HSC119 Datasheet





HSC119
HSC119
Silicon Epitaxial Planar Diode for High Speed Switching
Features
Low capacitance. (C=2.0pF max)
Short reverse recovery time. (trr =3.0ns max)
Ultra small Flat Package (UFP) is suitable for surface mount design.
ADE-208-615 (Z)
Rev 0
Apr. 1998
Ordering Information
Type No.
HSC119
Laser Mark
H1
Package Code
UFP
Outline
Cathode mark
Mark
1 H1 2
1. Cathode
2. Anode



HSC119
HSC119
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Peak reverse voltage
Reverse voltage
Average forward current
Peak rectified current
Non-Repetitive peak
forward surge current
VRM
VR
IO
I FM
I *1
FSM
Junction temperature
Tj
Storage temperature
Tstg
Note 1. Within 1µs forward surge current.
Value
85
80
100
300
4
125
–55 to +125
Unit
V
V
mA
mA
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Forward voltage
Reverse current
Capacitance
VF1
VF2
IR
C
——
——
——
——
Reverse recovery
time*1
t rr
——
Notes 1. Reverse recovery time test circuit
Max
0.8
1.2
0.1
2.0
3.0
Unit
V
µA
pF
ns
Test Condition
IF = 10 mA
IF = 100 mA
VR = 80V
VR = 0V, f = 1 MHz
IF = 10 mA, VR = 6V RL=50
DC
Supply
Ro =50Pulse
Generator
0.1µF
3k
Trigger
Sampling
Oscilloscope
Rin =50
2





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