PLANAR TRANSISTOR. HSC1815 Datasheet

HSC1815 TRANSISTOR. Datasheet pdf. Equivalent

Part HSC1815
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Spec. No. : HE6523 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSC1815 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Pl HSC1815 Datasheet
Recommendation Recommendation Datasheet HSC1815 Datasheet





HSC1815
HI-SINCERITY
MICROELECTRONICS CORP.
HSC1815
NPN Epitaxial Planar Transistor
Spec. No. : HE6523
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 1/4
Description
The HSC1815 is designed for use in driver stage of AF amplifier general purpose
amplification.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150 °C
Junction Temperature ..................................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .............................................................................................................................................. 60 V
VCEO Collector to Emitter Voltage........................................................................................................................................... 50 V
VEBO Emitter to Base Voltage ................................................................................................................................................... 5 V
IC Collector Current........................................................................................................................................................... 150 mA
IB Base Current................................................................................................................................................................... 50 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
60 -
-
50 -
-
5- -
- - 100
- - 100
- - 250
- -1
200 - 400
25 -
-
80 -
-
- - 3.5
Classification of hFE1
Rank
GR(G)
Range
200-400
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSC1815
HSMC Product Specification



HSC1815
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6523
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 2/4
Current Gain & Collector Current
1000
VCE=6V
100
10
Saturation Voltage & Collector Current
1
VBE(sat) @ IC=10IB
0.1
VCE(sat) @ IC=10IB
1
0.01
0.1 1 10 100
Collector Current (mA)
1000
0.01
0.01
0.1 1 10
Collector Current (mA)
100
1000
Capacitance & Reverse-Biased Voltage
10
Cutoff Frequency & Collector Current
1000
VCE=10V
100
Cob
10
1
0.1
1 10
Reverse-Biased Voltage (V)
10000
1000
100
10
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
1
1
HSC1815
10
Forward Voltage-VCE (V)
100
100
1
1
450
400
350
300
250
200
150
100
50
0
0
10
Collector Current (mA)
PD-Ta
100
50 100 150
Ambient Temperature-Ta(oC)
200
HSMC Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)