PLANAR TRANSISTOR. HSC1959 Datasheet

HSC1959 TRANSISTOR. Datasheet pdf. Equivalent

Part HSC1959
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSC1959 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6524 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSC1959 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSC1959 NPN EPITAXIAL PL HSC1959 Datasheet
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HSP200203 I HSC1959SP Datasheet
Recommendation Recommendation Datasheet HSC1959 Datasheet





HSC1959
HI-SINCERITY
MICROELECTRONICS CORP.
HSC1959
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6524
Issued Date : 1993.01.15
Revised Date : 2005.02.14
Page No. : 1/5
Description
The HSC1959 is designed for audio frequency Low power amplifier applications.
Features
Excellent hFE Linearity
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 500 mW
Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 35 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 30 V
VEBO Emitter to Base Voltage ................................................................................................................................ 5 V
IC Collector Current ....................................................................................................................................... 500 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
35
30
5
-
-
-
-
120
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
300
7
Max.
-
-
-
100
100
0.25
1
240
-
-
-
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=20mA, VCE=6V
IE=0, VCB=6V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSC1959
HSMC Product Specification



HSC1959
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6524
Issued Date : 1993.01.15
Revised Date : 2005.02.14
Page No. : 2/5
Current Gain & Collector Current
1000
Current Gain & Collector Current
1000
125oC
125oC
100 25oC
75oC
hFE @ VCE=1V
100
25oC
75oC
hFE @ VCE=6V
10
1
10 100
Collector Current-IC (mA)
1000
10
1
10 100
Collector Current-IC (mA)
1000
1000
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
100 75oC
125oC
25oC
ON Voltage & Collector Current
1000
25oC
125oC
75oC
VBE(ON) @ VCE=1V
10
1
1000
10 100
Collector Current-IC (mA)
Cutoff Frequency & IC
1000
100
1
10 100
Collector Current-IC (mA)
1000
Capacitance & Reverse-Biased Voltage
100
VCE=6V
100
10
Cob
10
1
HSC1959
10 100
Collector Current (mA)
1000
1
0.1 1 10
Reverse Biased Voltage (V)
100
HSMC Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)