HSC276
Silicon Schottky Barrier Diode for Mixer
ADE-208-421A(Z) Rev 1 Dec. 1998 Features
• High forward current, Low ca...
HSC276
Silicon
Schottky Barrier Diode for Mixer
ADE-208-421A(Z) Rev 1 Dec. 1998 Features
High forward current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC276 Laser Mark C2 Package Code UFP
Outline
Cathode mark Mark 1
C2
2 1. Cathode 2. Anode
HSC276
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability
*1
Symbol VR IR IF C —
Min 3 — 35 — 30
Typ — — — — —
Max — 50 — 0.85 —
Unit V µA mA pF V
Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
2
HSC276
Main Characteristic
-2
10
-2
10
Reverse current I R (A)
Forward current IF
(A)
10
-3
10
-3
10
-4
10
-4
10
-5
10
-5
10-6
0
0.1
0.2
0.3
0.4
10 -6
0
1
2
3
4
5
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
10
(pF) Capacitance C
1.0
10
-1
10
-1
1.0 Reverse voltage V R (V)
10
Fig.3 Capacitance Vs. Reverse voltage
3
HSC276
Package Dimensions
Unit : mm
Cathode Mark 1
C2
1.2 ± 0.10 1.6 ± 0.10
2 0.3 ± 0.05 0.8 ± 0.10
1. Cathode 2. Anode H...
