PLANAR TRANSISTOR. HSC3953 Datasheet

HSC3953 TRANSISTOR. Datasheet pdf. Equivalent

Part HSC3953
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6602 Issu.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
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HI-SINCERITY MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PL HSC3953 Datasheet
HI-SINCERITY MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL P HSC3953S Datasheet
Recommendation Recommendation Datasheet HSC3953 Datasheet





HSC3953
HI-SINCERITY
MICROELECTRONICS CORP.
HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2006.02.20
Page No. : 1/4
Description
High definition CRT display video output, wide-band amplifier.
Features
High fT: 500MHz
High Breakdown Voltage: BVCEO=120Vmin
Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
TO-126ML
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.3 W
Total Power Dissipation (TC=25°C) ...................................................................................................................... 8 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 120 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 120 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 3 V
IC Collector Current ........................................................................................................................................ 200 mA
ICP Peak Collector Current ............................................................................................................................. 400 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Min. Typ. Max.
120 -
-
120 -
-
3- -
- - 0.1
- - 0.1
- -1
- -1
60 - 320
40 -
-
- 400 -
Unit
V
V
V
uA
uA
V
V
MHz
Classification Of hFE1
Rank
Range
D
60-120
E
100-200
F
160-320
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=120V, IE=0
VEB=2V
IC=30mA, IB=3mA
IC=30mA, IB=3mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=50mA , VCE=10V
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSC3953
HSMC Product Specification



HSC3953
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2006.02.20
Page No. : 2/4
Current Gain & Collector Current
1000
Saturation Voltage & Collector Current
1000
VCE=10 V
100
100
VCE(sat) @ IC=10IB
10
10
0.1
1 10 100
Collector Current (mA)
1000
Saturation Voltage & Collector Current
1000
VBE(sat) @ IC=10IB
1
0.1
1 10 100
Collector Current (mA)
1000
Output Capacitance & Reverse-Biased Voltage
10
100
0.1
1000
1 10 100
Collector Current (mA)
1000
Safe Operating Area
1
0.1
Cob
1 10
Reverse-Biased Voltage (V)
100
100
10
1
HSC3953
PT=1ms
PT=100ms
PT=1s
10 100
Forward Voltage (V)
1000
HSMC Product Specification





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