PLANAR TRANSISTOR. HSC945SP Datasheet

HSC945SP TRANSISTOR. Datasheet pdf. Equivalent

Part HSC945SP
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200201 Issued Date : 1998.01.06 Revised Date : 20.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSC945SP Datasheet

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200201 Is HSC945SP Datasheet
Recommendation Recommendation Datasheet HSC945SP Datasheet





HSC945SP
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 1/4
HSC945SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AF amplifier and low speed switching
applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
Maximum Power Dissipations
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 50 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
50
135
150
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
Classification of hFE2
Max.
-
-
-
100
100
0.25
-
600
600
4
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
IC=1mA , VCE=10V, f=100MHz
IE=0, VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Rank
Range
Q
135-270
P
200-400
K
300-600
HSC945SP
HSMC Product Specification



HSC945SP
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 2/4
Current Gain & Collector Current
1000
125oC
Saturation Voltage & Collector Current
1000
VCE(sat) @IC=10IB
25oC
75oC
100
1
hFE @ VCE=6V
10
Collector Current-IC (mA)
100
100
10
0.1
125oC
25oC
75oC
1 10
Collector Current-IC (mA)
100
Saturation Voltage & Collector Current
1000
25oC
125oC
75oC
On Voltage & Collector Current
1
VBE(sat) @ IC=10IB
100
0.1
VBE(sat) @ IC=10IB
1 10
Collector Current-IC (mA)
100
Capacitance & Reverse-Biased Voltage
10
0.1
0.1
1 10
Collector Current (mA)
100
Cutoff Frequency & Collector Current
1000
fT @ VCE=5V
100
Cob
1
0.1
1 10
Reverse Biased Voltage (V)
100
10
1
HSC945SP
10
Collector Current (mA)
100
HSMC Product Specification





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