PLANAR TRANSISTOR. HSD1159 Datasheet

HSD1159 TRANSISTOR. Datasheet pdf. Equivalent

Part HSD1159
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD1159 NPN EPITAXIAL PLANAR TRANSISTOR Description Capable of e.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD1159 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSD1159 NPN EPITAXIAL PL HSD1159 Datasheet
Recommendation Recommendation Datasheet HSD1159 Datasheet





HSD1159
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1159
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Capable of efficient drive with small internal loss due to excellent tf.
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 200 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current ........................................................................................................... 4.5 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
ft
Min.
200
60
6
-
-
-
-
30
25
-
Typ.
-
-
-
-
-
0.5
-
-
-
10
Max.
-
-
-
0.1
0.1
1
1.5
160
-
-
Unit Test Conditions
V
V
V
mA
mA
V
V
MHz
IC=5mA, IE=0
IC=5mA, IB=0
IE=5mA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
IC=4A, IB=0.4A
IC=4A, IB=0.4A
IC=1A, VCE=5V
IC=4A, VCE=5V
VCE=5V, IC=1A
*Pulse Test : Pulse Width 380us, Duty Cycle2%
HSMC Product Specification



HSD1159
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 2/3
Current Gain & Collector Current
100
10000
Saturation Voltage & Collector Current
hFE @ VCE=5V
10
1
10 100 1000
Collector Current (mA)
10000
1000
100
10
1
VBE (sat) @ IC=10IB
VCE (sat) @ IC=10IB
10 100 1000
Collector Current (mA)
10000
10000
On Voltage & Collector Current
Switching Time & Collector Current
10
1000
VBE (on) @ VCE=4V
100
1
10 100 1000
Collector Current (mA)
10000
Capacitance & Reverse-Biased Voltage
1000
100
10
0.1
Cob
1 10
Reverse-Biased Voltage (V)
100
1
0.1
0.01
0.1
100000
10000
1000
100
10
1
1
Tstg
Ton
Tf
1.0
Collector Current (A)
Safe Operating Area
10.0
PT=1 ms
PT=100 ms
PT=1 s
10 100
Forward Voltage-VCE (V)
1000
HSMC Product Specification





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