HSD1159

HI-SINCERITY MICROELECTRONICS CORP. HSD1159 NPN EPITAXIAL PLANAR TRANSISTOR Description Capable of efficient drive with small internal loss due to excellent tf. Spec. No. : HE6706-B Issued Date : 1993.01.13 Revised Date : 1999.08.01 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 40 W Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 200 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEB...