HI-SINCERITY
MICROELECTRONICS CORP.
HSD667A
SILICON NPN EPITAXIAL
Description
Low Frequency Power Amplifier Complementar...
HI-SINCERITY
MICROELECTRONICS CORP.
HSD667A
SILICON
NPN EPITAXIAL
Description
Low Frequency Power Amplifier Complementary Pair With HSB647A.
Spec. No. : HE6510-B Issued Date : 1996.07.15 Revised Date : 2000.10.01 Page No. : 1/4
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ..................................................................................... 150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 120 V VCEO Collector to Emitter Voltage ................................................................................... 100 V VEBO Emitter to Base Vol...