TYPE TRANSISTOR. HSD879 Datasheet

HSD879 TRANSISTOR. Datasheet pdf. Equivalent


Part HSD879
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HA2002.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD879 Datasheet

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HSD879
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2005.02.15
Page No. : 1/4
Description
For 1.5V and 3v electronic flash use.
Features
Charger-up time is about 1 ms faster than of a germanium transistor
Small saturation voltage can bring less power dissipation and flashing times
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 750 mW
Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage......................................................................................................................... 30 V
BVCEX Collector to Emitter Voltage...................................................................................................................... 20 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 10 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current ................................................................................................................................................ 3 A
IC Collector Current (Pluse).................................................................................................................................... 5 A
Electrical Characteristics (TA=25°C)
Symbol
BVCEO
BVEBO
BVCBO
BVCEX
ICBO
IEBO
*hFE
*VCE(sat)
fT
Cob
Min. Typ. Max.
10 -
-
6- -
30 -
-
20 -
-
- - 100
- - 100
140 210 400
- 0.3 0.4
- 200 -
- 30 -
Unit
V
V
V
V
nA
nA
V
MHZ
pF
Test Condition
IC=1mA
IE=10uA
IC=10uA
IC=1mA, VBE=3V
VCB=20V
VBE=4V
VCE=2V, IC=3A
IC=3A, IB=60mA
VCE=10V, IC=50mA
VCB=10V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD879
HSMC Product Specification



HSD879
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2005.02.15
Page No. : 2/4
Current Gain & Collector Current
1000
125oC
75oC
25oC
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=50IB
100 75oC
hFE @ VCE=2V
125oC
25oC
100
1
10 100 1000
Collector Current-IC (mA)
10000
10
1
10 100 1000
Collector Current-IC (mA)
10000
Cutoff Frequency & Collector Current
1000
Capacitance & Reverse-Biased Voltage
100
VCE=10V
100
Cob
10
10
1
1
800
700
600
500
400
300
200
100
0
0
HSD879
10 100
Collector Current (mA)
Power Derating
1000
50 100 150
Ambient Temperature-Ta (oC)
200
1
1
10
Reverse Biased Voltage (V)
100
HSMC Product Specification





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