PLANAR TRANSISTOR. HSD880 Datasheet

HSD880 TRANSISTOR. Datasheet pdf. Equivalent

Part HSD880
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6729 Issue.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD880 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSD880 NPN EPITAXIAL PLA HSD880 Datasheet
Recommendation Recommendation Datasheet HSD880 Datasheet





HSD880
HI-SINCERITY
MICROELECTRONICS CORP.
HSD880
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6729
Issued Date : 1992.11.25
Revised Date : 2004.11.19
Page No. : 1/4
Description
The HSD880 is designed for low frequency power amplifier applications.
Features
High DC Current Gain
High Power Dissipation: PC=30W at TC=25°C
TO-220
Absolute Maximum Ratings (TA=25°C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 30 W
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.5 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage......................................................................................................................... 60 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 60 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 7 V
IC Collector Current ................................................................................................................................................ 3 A
IB Base Current ................................................................................................................................................... 0.5 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
fT
Min. Typ. Max.
60 -
-
60 -
-
- - 100
- - 100
- -1
- -1
60 - 300
-3-
Classification Of hFE
Rank
O
Range
60-120
Unit
V
V
uA
uA
V
V
MHz
Test Conditions
IC=1mA, IE=0
IC=50mA, IB=0
VCB=60V, IE=0
VEB=7V, IC=0
IC=3A, IB=0.3A
IC=0.5A, VCE=5V
IC=0.5A, VCE=5V
IC=500mA, VCE=5V
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Y
100-200
GR
150-300
HSD880
HSMC Product Specification



HSD880
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6729
Issued Date : 1992.11.25
Revised Date : 2004.11.19
Page No. : 2/4
Current Gain & Collector Current
1000
10000
Saturation Voltage & Collector Current
hFE @ VCE=5V
100
10
1
1
10
100
1000
10000
Collector Current (mA)
10000
On Voltage & Collector Current
1000
VBE(on) @ VCE=5V
1000
100
10
1
VBE(sat) @ IC=10IB
VCE(sat) @ IC=10IB
10 100 1000
Collector Current (mA)
10000
10.00
Switching Time & Collector Current
VCC=30V, IC=10IB1= -10IB2
1.00
Tstg
Ton
Tf
0.10
100
1
10 100 1000
Collector Current (mA)
10000
Capacitance & Reverse-Biased Voltage
1000
100
10
0.1
HSD880
Cob
1 10
Reverse-Biased Voltage (V)
100
0.01
0.1
100000
10000
1000
100
10
1
1
1.0
Collector Current (A)
Safe Operating Area
10.0
PT=1ms
PT=100ms
PT=1s
10 100
Forward Voltage-VCE (V)
1000
HSMC Product Specification





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