HI-SINCERITY
MICROELECTRONICS CORP.
HSD882
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6004 Issued Date : 1998.03.15 ...
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882
NPN EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2006.02.20 Page No. : 1/5
Description
The HSD882 is designed for using in output stage of 1w audio amplifier, voltage
regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (TA=25°C)
TO-126ML
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W Total Power Dissipation (TC=25°C) .............................................................................................