nm Lamp. HSDL-4230 Datasheet

HSDL-4230 Lamp. Datasheet pdf. Equivalent

Part HSDL-4230
Description High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp
Feature H High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp Technical Data HSDL-4200 Series H.
Manufacture Agilent(Hewlett-Packard)
Datasheet
Download HSDL-4230 Datasheet

H High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm HSDL-4230 Datasheet
Recommendation Recommendation Datasheet HSDL-4230 Datasheet





HSDL-4230
H
High-Performance T-13/4 (5 mm)
TS AlGaAs Infrared (875 nm)
Lamp
Technical Data
HSDL-4200 Series
HSDL-4220 30°
HSDL-4230 17°
Features
• Very High Power TS AlGaAs
Technology
• 875 nm Wavelength
• T-13/4 Package
• Low Cost
• Very High Intensity:
HSDL-4220 - 38 mW/sr
HSDL-4230 - 75 mW/sr
• Choice of Viewing Angle:
HSDL-4220 - 30°
HSDL-4230 - 17°
• Low Forward Voltage for
Series Operation
• High Speed: 40 ns Rise Times
• Copper Leadframe for
Improved Thermal and
Optical Characteristics
Applications
• Compatible with IrDA SIR
Standard
• IR Audio
• IR Telephones
• High Speed IR
Communications
IR LANs
IR Modems
IR Dongles
• Industrial IR Equipment
Package Dimensions
1.14 ± 0.20
8.70 ± 0.20 (0.045 ± 0.008)
(0.343 ± 0.008)
31.4
(1.23)
MIN.
1.27 NOM.
(0.050)
5.80 ± 0.20
(0.228 ± 0.008)
4-48
5.00 ± 0.20
(0.197 ± 0.008)
2.35
(0.093)
MAX.
0.70
(0.028)
MAX.
CATHODE
0.50
(0.020
±
±
0.10 SQUARE
0.004)
CATHODE
2.54 NOM.
(0.100)
• IR Portable Instruments
• Interfaces with Crystal
Semiconductor CS8130
Infrared Transceiver
Description
The HSDL-4200 series of emitters
are the first in a sequence of
emitters that are aimed at high
power, low forward voltage, and
high speed. These emitters utilize
the Transparent Substrate, double
heterojunction, Aluminum Gal-
lium Arsenide (TS AlGaAs) LED
technology. These devices are
optimized for speed and efficiency
at emission wavelengths of 875
nm. This material produces high
radiant efficiency over a wide
range of currents up to 500 mA
peak current. The HSDL-4200
series of emitters are available in
a choice of viewing angles, the
HSDL-4230 at 17° and the
HSDL-4220 at 30°. Both lamps
are packaged in clear T-13/4
(5 mm) packages.
5964-9642E



HSDL-4230
The package design of these
emitters is optimized for efficient
power dissipation. Copper
leadframes are used to obtain
better thermal performance than
the traditional steel leadframes.
The wide angle emitter, HSDL-
4220, is compatible with the IrDA
SIR standard and can be used
with the HSDL-1000 integrated
SIR transceiver.
Absolute Maximum Ratings
Parameter
Peak Forward Current
Symbol
IFPK
Average Forward Current
DC Forward Current
Power Dissipation
Reverse Voltage (IR = 100 µA)
Transient Forward Current (10 µs Pulse)
Operating Temperature
Storage Temperature
LED Junction Temperature
Lead Soldering Temperature
[1.6 mm (0.063 in.) from body]
IFAVG
IFDC
PDISS
VR
IFTR
TO
TS
TJ
Min Max Unit
Reference
500 mA
[2], Fig. 2b
Duty Factor = 20%
Pulse Width = 100 µs
100 mA
[2]
100 mA
[1], Fig. 2a
260 mW
5V
1.0
0 70
-20 85
110
260 for
5 seconds
A
°C
°C
°C
°C
[3]
Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
the wire bonds.
Electrical Characteristics at 25°C
Parameter
Forward Voltage
Symbol
VF
Min
1.30
1.40
Forward Voltage
Temperature Coefficient
Series Resistance
Diode Capacitance
Reverse Voltage
Thermal Resistance,
Junction to Pin
V/T
RS
CO
VR
Rθjp
5
Typ
1.50
1.67
2.15
-2.1
-2.1
2.8
40
20
110
Max
1.70
1.85
Unit
V
mV/ °C
ohms
pF
V
°C/W
Condition
IFDC = 50 mA
IFDC = 100 mA
IFPK = 250 mA
IFDC = 50 mA
IFDC = 100 mA
IFDC = 100 mA
0 V, 1 MHz
IR = 100 µA
Reference
Fig. 2a
Fig. 2b
Fig. 2c
4-49





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