Speed Switching. HSK120 Datasheet

HSK120 Switching. Datasheet pdf. Equivalent

Part HSK120
Description Silicon Epitaxial Planar Diode for High Speed Switching
Feature HSK120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-171C(Z) Rev 3 Jan. 1999 Feat.
Manufacture Hitachi Semiconductor
Datasheet
Download HSK120 Datasheet

HSK120 Silicon Epitaxial Planar Diode for High Speed Switchi HSK120 Datasheet
Recommendation Recommendation Datasheet HSK120 Datasheet





HSK120
HSK120
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-171C(Z)
Rev 3
Jan. 1999
Features
Low reverse recovery time. (trr =3.0ns max)
LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No.
HSK120
Cathode band
White
Package Code
LLD
Outline
Cathode band
12
Cathode band
12
1. Cathode
2. Anode



HSK120
HSK120
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak
forward surge current
VRM
VR
I FM
I *1
FSM
Average rectified current IO
Junction temperature
Tj
Storage temperature
Tstg
Note 1. Within 1µs forward surge current..
Value
70
60
450
4
150
175
-65 to +175
Unit
V
V
mA
A
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse voltage
Reverse current
Capacitance
Reverse recovery
time
Symbol Min Typ Max Unit Test Condition
VF
— — 0.8 V
IF = 10 mA
VR
70 — — V
IR = 5µA
IR — — 0.1 µA VR = 60V
C — — 3.0 pF VR = 0V, f = 1 MHz
trr — — 3.0 ns IF = 10 mA, VR = 6V, RL = 50, Irr = 0.1IR
2





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