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HSK120 Dataheets PDF



Part Number HSK120
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Epitaxial Planar Diode for High Speed Switching
Datasheet HSK120 DatasheetHSK120 Datasheet (PDF)

HSK120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-171C(Z) Rev 3 Jan. 1999 Features • Low reverse recovery time. (trr =3.0ns max) • LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK120 Cathode band White Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive pe.

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HSK120 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-171C(Z) Rev 3 Jan. 1999 Features • Low reverse recovery time. (trr =3.0ns max) • LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK120 Cathode band White Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK120 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 70 60 450 4 150 175 -65 to +175 Unit V V mA A mA °C °C 1. Within 1µs forward surge current.. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse voltage Reverse current Capacitance Reverse recovery time Symbol VF VR IR C t rr Min — 70 — — — Typ — — — — — Max 0.8 — 0.1 3.0 3.0 Unit V V µA pF ns Test Condition I F = 10 mA I R = 5µA VR = 60V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V, RL = 50Ω, I rr = 0.1IR 2 HSK120 Main Characteristic -1 10 10 -4 Ta=125°C 10 (A) 10 -2 -5 Reverse current I R (A) Forward current I F 10 -6 Ta=75°C Ta= 125 °C Ta=7 5°C Ta=2 5°C Ta=-2 5°C 10 -3 10 -7 Ta=25°C 10 -8 10 -4 0 0.2 0.8 0.4 0.6 1.0 Forward voltage V F (V) 1.2 10 -9 0 60 20 80 40 Reverse voltage V R (V) 100 Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage V R (V) 10 2 Fig.3 Capacitance Vs. Reverse voltage 3 HSK120 Package Dimensions Unit : mm 3.5 φ 1.35 ± 0.1 +0.1 –0.2 3.5 φ 1.35 ± 0.1 +0.1 –0.2 1 2 1 2 (0.35typ) Cathode band (White) (0.35typ) Cathode band (White) 1. Cathode 2. Anode ( ) : Reference only Hitachi Code JEDECCode EIAJCode Weight(g) LLD \ \ 0.027 4 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so th.


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