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HSK83 Dataheets PDF



Part Number HSK83
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon Epitaxial Planar Diode for High Voltage Switching
Datasheet HSK83 DatasheetHSK83 Datasheet (PDF)

HSK83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-169C(Z) Rev 3 Dec. 1998 Features • High reverse voltage. (VR=250V) • LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK83 Cathode band White 2nd band Verdure Package Code LLD Outline Cathode band 1 2nd. band Cathode band 1 2nd. band 2 2 1. Cathode 2. Anode HSK83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward cu.

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HSK83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-169C(Z) Rev 3 Dec. 1998 Features • High reverse voltage. (VR=250V) • LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK83 Cathode band White 2nd band Verdure Package Code LLD Outline Cathode band 1 2nd. band Cathode band 1 2nd. band 2 2 1. Cathode 2. Anode HSK83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 300 250 625 1 150 175 -65 to +175 Unit V V mA A mA °C °C 1. Value at duration of 1s. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — 1.5 — Max 1.0 0.1 100 — 100 pF ns Unit V µA Test Condition I F = 100 mA VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 mA, Irr = 3mA, RL = 100Ω 2 HSK83 Main Characteristic -1 -5 10 10 Ta=75°C (A) Forward current I F 10 -2 Reverse current I R (A) 10 -6 Ta=50°C 10 -7 10 -3 Ta= 1 Ta= 25°C 7 Ta= 5°C 25°C Ta=25°C Ta=25°C 10 -8 10 -4 10 0 0.2 0.8 0.4 0.6 1.0 Forward voltage V F (V) 1.2 -9 0 150 50 200 100 Reverse voltage V R (V) 250 Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage V R (V) 10 2 Fig.3 Capacitance Vs. Reverse voltage 3 HSK83 Package Dimensions Unit : mm 3.5 φ 1.35 ± 0.1 +0.1 –0.2 3.5 φ 1.35 ± 0.1 +0.1 –0.2 1 2 1 2 (0.35typ) 2nd. band (Verdure) Cathode band (White) (0.35typ) 2nd. band (Verdure) Cathode band (White) 1. Cathode 2. Anode ( ) : Reference only Hitachi Code JEDECCode EIAJCode Weight(g) LLD \ \ 0.027 4 HSK83 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collye.


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