1.0 Ampere. HSM106 Datasheet

HSM106 Ampere. Datasheet pdf. Equivalent

Part HSM106
Description SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere)
Feature RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HSM101 THRU HSM106 SURFACE MOUNT GLASS PASSIVATED HI.
Manufacture Rectron Semiconductor
Datasheet
Download HSM106 Datasheet

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HSM101 THRU H HSM106 Datasheet
DC COMPONENTS CO., LTD. R HSM101 THRU HSM106 RECTIFIER SPE HSM106 Datasheet
Recommendation Recommendation Datasheet HSM106 Datasheet





HSM106
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.205 (5.2)
.190 (4.8)
HSM101
THRU
HSM106
MELF
SOLDERABLE
ENDS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.028 (.60)
.018 (.46)
.106 (2.7)
.095 (2.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
HSM101 HSM102 HSM103 HSM104 HSM105 HSM106
50 100 200 300 400 600
35 70 140 210 280 420
50 100 200 300 400 600
UNITS
Volts
Volts
Volts
1.0 Amps
IFSM
CJ
TJ, TSTG
30
15
-65 to + 175
Amps
12 pF
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle .375” (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
trr
HSM101 HSM102 HSM103 HSM104 HSM105 HSM106
1.0 1.3 1.70
5.0
UNITS
Volts
uAmps
100 uAmps
50 75 nSec
2001-4



HSM106
RATING AND CHARACTERISTIC CURVES ( HSM101 THRU HSM106 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
trr
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
(+)
25 Vdc
(approx)
(¡V)
D.U.T
1
NON-
INDUCTIVE
(¡V)
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
Single Phase
Half Wave 60Hz
Resistive or
1.0 Inductive Load
1cm
SET TIME BASE FOR
10/20 ns/cm
0
0 25 50 75 100125150175
AMBIENT TEMPERATURE ( )
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
10 TJ = 150
TJ = 100
1.0
1.0
.1
TJ = 25
.1
TJ = 25
.01
Pulse Width = 300uS
1% Duty Cycle
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
.001
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
HSM101~HSM105
10
6 TJ = 25 HSM106
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON





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