System Protection. HSM126S Datasheet

HSM126S Protection. Datasheet pdf. Equivalent

Part HSM126S
Description Silicon Schottky Barrier Diode for System Protection
Feature HSM126S Silicon Schottky Barrier Diode for System Protection ADE-208-111C (Z) Rev. 3 May 1995 Featu.
Manufacture Hitachi Semiconductor
Datasheet
Download HSM126S Datasheet

HSM126S Silicon Schottky Barrier Diode for System Protection HSM126S Datasheet
Recommendation Recommendation Datasheet HSM126S Datasheet





HSM126S
HSM126S
Silicon Schottky Barrier Diode for System Protection
ADE-208-111C (Z)
Rev. 3
May 1995
Features
HSM126S which is connected in series configuration enable to protect electric systems from miss-
operation against external + and – surge.
Low VF and low leakage current.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM126S
Laser Mark
S14
Package Code
MPAK
Pin Arrangement
3
21
(Top View)
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2



HSM126S
HSM126S
Absolute Maximum Ratings (Ta = 25°C)*3
Item
Repetitive peak reverse voltage
Average forward current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. Sine wave, Two device total
2. 50Hz half sine wave 1 pulse
3. Per one device
Symbol
VRRM
IO*1
I FSM * 2
Tj
Tstg
Value
20
200
2
125
–55 to +125
Unit
V
mA
A
°C
°C
Electrical Characteristics (Ta = 25°C)*
Item
Symbol Min Typ Max Unit Test Condition
Reverse current
Forward voltage
Capacitance
Note: Per one device
IR
VF
C
— — 2.0 µA VR = 5V
— — 0.35 V
IF = 10mA
— 40 — pF VR = 0V, f = 1MHz
10
Pulse test
1.0
10–1
Ta = 75°C
10–2
Ta = 25°C
10–3
10–4
10–5
0
0.2 0.4 0.6 0.8
Forward voltage VF (V)
1.0
Fig.1 Forward current Vs. Forward voltage
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)