HSM198S

HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B (Z) Rev. 2 Jun. 1993 Features Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM198S Laser Mark C6 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM198S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Two device total Symbol VR I O* Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C)*1 Item Forward voltage Reverse current Forward current Capacitance Capacitance deviation Rectifier efficiency ESD Capability Symbol VF IR IF C ∆V F η — Min — — 4.5 — — 70 30 Typ — — — — — — — Max 1.1 70 — 1.5 10 — — Unit V µA mA pF mV % V Test Condition I F = 5mA VR = 6V VF = 1V VR = 1V, f = 1MHz I F = 5mA Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20pF * 2C = 200pF, Both forward and reverse direction 1 pulse Notes: 1. Per one device 2. Failure Criterrion; IR ≥ 140 µA at VR = 6V 2 HSM198S 10 –2 10 Forward current I F (A) –3 10 –4 10 –5 10 –6 0 0.4 0.6 0.8 0.2 Forward voltage VF (V) 1.0 Fig.1 Forward current Vs. Forward voltage –2 10 Reverse current I R (A) 10 –3 10 –4 10 –5 10 –6 0...