speed switching. HSM198S Datasheet

HSM198S switching. Datasheet pdf. Equivalent

Part HSM198S
Description Silicon Schottky Barrier Diode forVarious Detector/ High speed switching
Feature HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B (Z) R.
Manufacture Hitachi Semiconductor
Datasheet
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HSM198S Silicon Schottky Barrier Diode forVarious Detector, HSM198S Datasheet
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HSM198S
HSM198S
Silicon Schottky Barrier Diode forVarious Detector,
High speed switching
ADE-208-090B (Z)
Rev. 2
Jun. 1993
Features
Detection efficiency is very good.
Small temperature coefficient.
HSM198S which is interconnected in series configuration is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM198S
Laser Mark
C6
Package Code
MPAK
Pin Arrangement
3
21
(Top View)
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2



HSM198S
HSM198S
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Average forward current
Junction temperature
Storage temperature
Note: Two device total
Symbol
VR
IO*
Tj
Tstg
Value
10
30
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)*1
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Forward current
Capacitance
Capacitance deviation
Rectifier efficiency
VF
IR
IF
C
VF
η
ESD Capability
——
——
4.5 —
——
——
70 —
30 —
1.1 V
IF = 5mA
70 µA VR = 6V
— mA VF = 1V
1.5 pF VR = 1V, f = 1MHz
10 mV IF = 5mA
— % Vin = 2Vrms, f = 40MHz,
RL = 5k, CL = 20pF
—V
*2C = 200pF, Both forward and
reverse direction 1 pulse
Notes: 1. Per one device
2. Failure Criterrion; IR 140 µA at VR = 6V
2





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