Balanced Mixer. HSM276AS Datasheet

HSM276AS Mixer. Datasheet pdf. Equivalent

Part HSM276AS
Description Silicon Schottky Barrier Diode for Balanced Mixer
Feature HSM276AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-839 (Z) Rev 0 Feb. 2000 Features.
Manufacture Hitachi Semiconductor
Datasheet
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HSM276AS
HSM276AS
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-839 (Z)
Rev 0
Feb. 2000
Features
High forward current, Low capacitance.
HSM276AS which is interconnected in series configuration is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM276AS
Laser Mark
S19
Package Code
MPAK
Outline
3
21
(Top View)
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2



HSM276AS
HSM276AS
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Repetitive peak reverse VRRM
voltage
Reverse voltage
Average rectified current
Junction temperature
VR
I
*
O
Tj
Storage temperature
Tstg
Note: Per one device
Value
5
3
30
125
-55 to +125
Unit
V
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C) *2
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
Reverse current
Forward current
Capacitance
Capacitance deviation
ESD-Capability*1
VR
IR
IF
C
C
3.0 —
——
35 —
——
——
30 —
—V
50 µA
— mA
0.90 pF
0.10 pF
—V
IR = 1 mA
VR = 0.5V
VF = 0.5V
VR = 0.5V, f = 1 MHz
VR = 0.5V, f = 1 MHz
C=200pF , R = 0
Both forward and reverse direction 1pulse.
Notes: 1. Failure criterion ; IR 100µA at VR =0.5 V
2. Per one device
2





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