Balanced Mixer. HSM276ASR Datasheet

HSM276ASR Mixer. Datasheet pdf. Equivalent


Part HSM276ASR
Description Silicon Schottky Barrier Diode for Balanced Mixer
Feature HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb. 2000 Features.
Manufacture Hitachi Semiconductor
Datasheet
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HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer HSM276ASR Datasheet
Recommendation Recommendation Datasheet HSM276ASR Datasheet




HSM276ASR
HSM276ASR
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-840(Z)
Rev 0
Feb. 2000
Features
High forward current, Low capacitance.
HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM276ASR
Laser Mark
S20
Package Code
MPAK
Outline
3
21
(Top View)
1 Anode 1
2 Cathode 2
3 Cathode 1
Anode 2



HSM276ASR
HSM276ASR
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Repetitive peak reverse VRRM
voltage
Reverse voltage
Average rectified current
Junction temperature
VR
I
*
O
Tj
Storage temperature
Tstg
Note: Per one device
Electrical Characteristics (Ta = 25°C) *2
Value
5
3
30
125
-55 to +125
Unit
V
V
mA
°C
°C
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
Reverse current
Forward current
Capacitance
Capacitance deviation
ESD-Capability*1
VR
IR
IF
C
C
3.0 —
——
35 —
——
——
30 —
—V
50 µA
— mA
0.90 pF
0.10 pF
—V
IR = 1 mA
VR = 0.5V
VF = 0.5V
VR = 0.5V, f = 1 MHz
VR = 0.5V, f = 1 MHz
C=200pF, R= 0
Both forward and reverse direction 1pulse.
Notes: 1. Failure criterion ; IR 100µA at VR =0.5 V
2. Per one device
2







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