HSM276S

HSM276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-039E (Z) Rev 5 Jul 1998 Features High forward current, Low capacitance. HSM276S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276S Laser Mark C2 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM276S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *1 Symbol Min VR IR IF C ∆C — 3.0 — 35 — — 30 Typ — — — — — — Max — 50 — 0.90 0.10 — Unit V µA mA pF pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V 2 HSM276S Main Characteristic -1 -2 10 10 Forward current I F (A) 10 -3 Reverse current I R (A) 0.8 0.4 0.6 0.2 Forward voltage VF (V) 1.0 10 -2 10 -3 10 -4 10 -4 10 -5 10 -5 0 10 -6 0 4.0 2.0 3.0 1.0 Reverse voltage VR (V) 5.0 Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10...