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HSM88WA

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Balanced Mixer

HSM88WA Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-048D (Z) Rev 4 Jul 1998 Features • Proof against high...


Hitachi Semiconductor

HSM88WA

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HSM88WA Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-048D (Z) Rev 4 Jul 1998 Features Proof against high voltage. MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88WA Laser Mark C7 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HSM88WA Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability *1 Typ — — — — — — — — Max 420 580 0.2 10 0.85 0.10 10 — Unit mV µA Test Condition I F = 1 mA I F = 10 mA VR = 2V VR = 10V 350 500 — — — — — 30 C ∆C ∆ VF Å\ pF pF mV V VR = 0V, f = 1 MHz VR = 0V, f = 1 MHz I F = 10 mA C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V 2 HSM88WA Main Characteristic 10-2 10-3 -5 10 Forward current I F (A) 10 -4 10-5 -6 Reverse current I R (A) 10 -6 10 -7 10 10 -7 10 10 -8 10 -8 -9 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) -9 0 5 10 15 Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage V R (V) 10 Fig.3 Capacitanc...




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