HMC462

MICROWAVE CORPORATION v00.0703 HMC462 Features Noise Figure: 2 dB @ 10 GHz Gain: 15 dB P1dB Output Power: +15 dBm @ 10 GHz Self-Biased: +5.0V @ 63 mA 50 Ohm Matched Input/Output 3.12 mm x 1.38 mm x 0.1 mm GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC462 Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram General Description The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications. The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= 5V Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Inte...