GaAs MMIC. HMC484MS8G Datasheet

HMC484MS8G MMIC. Datasheet pdf. Equivalent

Part HMC484MS8G
Description GaAs MMIC
Feature MICROWAVE CORPORATION v01.0404 HMC484MS8G GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz Features High .
Manufacture Hittite Microwave Corporation
Datasheet
Download HMC484MS8G Datasheet

MICROWAVE CORPORATION v01.0404 HMC484MS8G GaAs MMIC 10 WAT HMC484MS8G Datasheet
Recommendation Recommendation Datasheet HMC484MS8G Datasheet





HMC484MS8G
v01.0404
MICROWAVE CORPORATION
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH
DC - 3.0 GHz
14
14 - 260
Typical Applications
Features
The HMC484MS8G is ideal for:
High RF Power Handling: > +40 dBm
• Wireless Infrastructure
High Third Order Intercept: > +70 dBm
• ISM/Cellular Portables/Handsets
Single Positive Supply: +3 to +10 Vdc
• Automotive Telematics
Low Insertion Loss: 0.4 to 0.6 dB
• Mobile Radio
Ultra Small MSOP8G Package: 14.8 mm2
• Test Equipment
Functional Diagram
General Description
The HMC484MS8G is a low-cost SPDT switch in
an 8-lead MSOPG package for use in transmit-
receive applications which require very low dis-
tortion at high input signal power levels, through
10 watts (+40 dBm). The device can control
signals from DC to 3.0 GHz. The design provides
exceptional intermodulation performance; > +70
dBm third order intercept at +5 volt bias. RF1 and
RF2 are reflective shorts when “OFF”. On-chip
circuitry allows single positive supply operation
from +3 Vdc to +10 Vdc at very low DC current
with control inputs compatible with CMOS and
Electrical Specifications,
most TTL logic families.
TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min. Typ. Max. Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.4 0.6
0.6 0.8
0.8 1.1
0.9 1.3
dB
dB
dB
dB
Isolation
DC - 3.0 GHz
26
30
dB
Return Loss (On State)
DC - 1.0 GHz 24 dB
DC - 2.0 GHz 20 dB
DC - 2.5 GHz 17 dB
DC - 3.0 GHz 13 dB
Input Power for 0.1dB Compression
Vctl = 0/+3V
Vctl = 0/+5V
Vctl = 0/+8V
0.5 - 3.0 GHz
32 dBm
36 dBm
39 dBm
Input Power for 1dB Compression
Vctl = 0/+3V
32 35.5
Vctl = 0/+5V 0.5 - 3.0 GHz
37
40
Vctl = 0/+8V
40 >40
dBm
dBm
dBm
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
72 dBm
70 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF) DC - 3.0 GHz 15 ns
tON, tOFF (50% CTL to 10/90% RF)
40 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com



HMC484MS8G
v01.0404
MICROWAVE CORPORATION
HMC484MS8G
GaAs MMIC 10 WATT T/R SWITCH
DC - 3.0 GHz
Insertion Loss vs. Temperature
0
-0.5
-1
-1.5
-2 +25 C
+85 C
-2.5 -40 C
-3
0 0.5 1 1.5 2 2.5 3
FREQUENCY (GHz)
3.5
Isolation
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0
0.5
RF1
RF2
1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
Insertion Loss vs. Bias Voltage (Vdd)
0
-0.5
-1
-1.5
+3 Volts
-2
+5 Volts
+8 Volts
+10 Volts
-2.5
-3
0 0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
Return Loss
0
-5
-10
RFC
RF1, RF2
-15
-20
-25
-30
0 0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
Isolation vs. Bias Voltage (Vdd)
0
-5
-10
+3 Volts
-15 +5 Volts
+8 Volts
-20 +10 Volts
-25
-30
-35
-40
-45
-50
0 0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
RF1 to RF2 Isolation
0
-5 ALL OFF
RF1 ON
-10 RF2 ON
-15
-20
-25
-30
-35
-40
-45
-50
0 0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14 - 261





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)