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HMJE13003T Dataheets PDF



Part Number HMJE13003T
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HMJE13003T DatasheetHMJE13003T Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ...

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................. 400 V BVEBO Emitter to Base Voltage............................................................................................ 8 V IC Collector Current (DC) ...................................................................................................... 1 A IC Collector Current (Pulse) .................................................................................................. 2 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Min. 600 400 8 10 10 6 Typ. - Max. 10 10 0.8 0.9 1.2 1.8 50 - Unit Test Conditions V IC=1mA, IE=0 V IC=10mA, IB=0 V IE=1mA, IC=0 uA VCB=600V, IE=0 uA VBE=9V, IC=0 V IC=0.1A, IB=10mA V IC=0.3A, IB=30mA V IC=0.1A, IB=10mA V IC=0.3A, IB=30mA IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HMJE13003T HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 2/3 Current Gain & Collector Current 100 125oC 25oC 10 75oC hFE @ VCE=2V Saturation Voltage (mV) Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=3IB 75oC 100 125oC 25oC hFE 1 0.1 1 10 100 1000 10000 Collector Current-IC (mA) 10 1 10 100 1000 Collector Current-IC (mA) 10000 10000 Saturation Voltage & Collector Current VCE(sat) @ IC=4IB 1000 100 75oC 125oC 25oC 10000 Saturation Voltage & Collector Current VCE(sat) @ IC=5IB 1000 100 75oC 125oC 25oC Saturation Vpltage (mV) Saturation Voltage (mV) 10 1 10 100 1000 Collector Current-IC (mA) 10000 10000 Saturation Voltage & Collector Current VBE(sat) @ IC=4IB Saturation Voltage (mV) 1000 25oC 75oC 125oC 100 1 HMJE13003.


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