Document
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications.
Features
• High Speed Switching • Low Saturation Voltage • High Reliability
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
• Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................. 400 V BVEBO Emitter to Base Voltage............................................................................................ 8 V IC Collector Current (DC) ...................................................................................................... 1 A IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3
Min. 600 400
8 10 10 6
Typ. -
Max. 10 10
0.8 0.9 1.2 1.8 50
-
Unit Test Conditions V IC=1mA, IE=0 V IC=10mA, IB=0 V IE=1mA, IC=0 uA VCB=600V, IE=0 uA VBE=9V, IC=0 V IC=0.1A, IB=10mA V IC=0.3A, IB=30mA V IC=0.1A, IB=10mA V IC=0.3A, IB=30mA IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13003T
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 2/3
Current Gain & Collector Current
100
125oC
25oC 10
75oC
hFE @ VCE=2V
Saturation Voltage (mV)
Saturation Voltage & Collector Current
1000 VCE(sat) @ IC=3IB
75oC
100 125oC
25oC
hFE
1
0.1
1
10
100
1000
10000
Collector Current-IC (mA)
10 1
10 100 1000 Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=4IB
1000 100
75oC
125oC
25oC
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=5IB
1000 100
75oC
125oC
25oC
Saturation Vpltage (mV)
Saturation Voltage (mV)
10 1
10 100 1000 Collector Current-IC (mA)
10000
10000
Saturation Voltage & Collector Current
VBE(sat) @ IC=4IB
Saturation Voltage (mV)
1000
25oC
75oC
125oC
100 1
HMJE13003.