PLANAR TRANSISTOR. HMJE3055T Datasheet

HMJE3055T TRANSISTOR. Datasheet pdf. Equivalent

Part HMJE3055T
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Is.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HMJE3055T Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL HMJE3055T Datasheet
Recommendation Recommendation Datasheet HMJE3055T Datasheet





HMJE3055T
HI-SINCERITY
MICROELECTRONICS CORP.
HMJE3055T
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6737
Issued Date : 1993.09.24
Revised Date : 2004.11.19
Page No. : 1/4
Description
The HMJE3055T is designed for general purpose of amplifier and switching
applications.
Absolute Maximum Ratings (TA=25°C)
TO-220
Maximum Temperature
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 75 W
Total Power Dissipation (TA=25°C) ................................................................................................................... 0.6 W
Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage......................................................................................................................... 70 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 60 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current ............................................................................................................................................. 10 A
IB Base Current ...................................................................................................................................................... 6 A
Electrical Characteristics (TA=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICEX
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Min. Typ. Max.
60 -
-
70 -
-
5- -
- - 1.
- - 1.
- - 700
- -5
- - 1.1
- - 8.0
- - 1.8
20 - 100
5- -
2- -
Unit
V
V
V
mA
mA
uA
mA
V
V
V
MHz
Test Conditions
IC=200mA, IB=0
IC=10mA, IE=0
IE=10mA, IC=0
VCB=70V, IE=0
VCE=70V, VEB(off)=1.5V
VCE=30V, IB=0
VEB=5V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
VCE=10V, IC=500mA, f=0.5MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMJE3055T
HSMC Product Specification



HMJE3055T
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6737
Issued Date : 1993.09.24
Revised Date : 2004.11.19
Page No. : 2/4
Current Gain & Collector Current
100
10000
Saturation Voltage & Collector Current
hFE @ VCE=4V
10
1
10 100 1000
Collector Current (mA)
10000
1000
100
10
1
VBE (sat) @ IC=10IB
VCE (sat) @ IC=10IB
10 100 1000
Collector Current (mA)
10000
10000
On Voltage & Collector Current
Switching Time & Collector Current
10
1000
VBE (on) @ VCE=4V
100
1
10 100 1000
Collector Current (mA)
10000
Capacitance & Reverse-Biased Voltage
1000
100
10
0.1
HMJE3055T
Cob
1 10
Reverse-Biased Voltage (V)
100
1
0.1
0.01
0.1
100000
10000
1000
100
10
1
1
Tstg
Ton
Tf
1.0
Collector Current (A)
Safe Operating Area
10.0
PT=1 ms
PT=100 ms
PT=1 s
10 100
Forward Voltage-VCE (V)
1000
HSMC Product Specification





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