HN1D03FU

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU HN1D03FU Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Built in anode common and cathode common. Note1: For detail information, please contact our sales Unit: mm Unit 1  Low forward voltage  Fast reverse recovery time  Small total capacitance Unit 2  Low forward voltage  Fast reverse recovery time  Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 pF (typ.) Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: CT = 2.2 pF (typ.) Unit 1, Unit 2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) VRM VR IFM IO IFSM 85 V 80 V 300 (*) mA 100 (*) mA 2 (*) A US6 ― JEITA ― TOSHIBA 1-2T1D Weight: 6.2mg (typ.) Power dissipation PD (Note 4) 200 mW Junction temperature Tj (Note 2) 150 °C Tj (Note 3) 125 Storage temperature Tstg (Note 2) −55 to 150 °C Tstg (Note 3) −55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability...