32/113-sector 542/581/248-bit. HN29V51211 Datasheet

HN29V51211 542/581/248-bit. Datasheet pdf. Equivalent


Part HN29V51211
Description 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
Feature HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit) ADE-203-1221.
Manufacture Hitachi Semiconductor
Datasheet
Download HN29V51211 Datasheet


HN29V51211 Series 512M AND type Flash Memory More than 32,11 HN29V51211 Datasheet
Recommendation Recommendation Datasheet HN29V51211 Datasheet




HN29V51211
HN29V51211 Series
512M AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
ADE-203-1221 (Z)
Preliminary
Rev. 0.0
Sep. 20, 2000
Description
The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all
sector address) and less than 32,768 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.



HN29V51211
HN29V51211 Series
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50 µs (max)
Serial access time: 50 ns (max)
Low power dissipation:
ICC1 = 2 mA (typ) (Read)
ICC2 = 20 mA (max) (Read)
ISB2 = 50 µA (max) (Standby)
ICC3/ICC4 = 40 mA (max) (Erase/Program)
ISB3 = 20 µA (max) (Deep standby)
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (579 sectors) within usable sectors
Ordering Information
Type No.
HN29V51211T-50
Available sector
More than 32,113 sectors
Package
12.0 × 18.40 mm2 0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
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