HN29V51211

HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector (542,581,248-bit) ADE-203-1221 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211 are more than 32,113 (98% of all sector address) and less than 32,768 sectors. Features On-board single power supply (VCC): VCC = 2.7 V to 3.6 V Organization  AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)  Data register: (2048 + 64) bytes Multi-level memory cell  2 bit/per memory cell Automatic programming  Sector program time: 1.0 ms (typ)  System bus free  Address, data latch function  Internal automatic program verify function  Status data polling function Automatic erase  Single sector erase time: 1.0 ms (typ)  System bus free  Internal automatic erase verify function  Status data polling function Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification. HN29V51211 Series Erase mode  Single sector erase ((2048 + 64) byte unit) Fast serial read access time:  First access time: 50 µs (max)  Serial a...