HN2D01F

HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm  HN2D01F is composed of 3 independent diodes.  Low forward voltage : VF (3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 (*) mA Average forward current IO 80 (*) mA Surge current (10 ms) IFSM 1 (*) A Power dissipation PD (Note 3) 300 mW Junction temperature Storage temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 JEDEC JEITA TOSHIBA ― SC-74 1-3K1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.015g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. No...