HP4410DY

HP4410DY Data Sheet December 2001 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Features Logic Level Gate Drive 10A, 30V rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information PART NUMBER HP4410DY PACKAGE SO-8 BRAND P4410DY SOURCE(1) DRAIN(8) SOURCE(2) DRAIN(7) NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HP4410DYT. SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) Packaging SO-8 ©2001 Fairchild Semiconductor Corporation HP4410DY Rev. B HP4410DY Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HP4410DY Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS...