HPMX-3002

Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features RFIC Medium Power Amplifier 150-960 MHz Operating Range +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz 50 dB Typ. Power Control Range 6 V, 160 mA Operation S0-8 Surface Mount Package with Improved Heatsinking Plastic S0-8 Package Description Hewlett-Packard’s HPMX-3002 is a silicon microwave monolithic integrated circuit driver amplifier housed in a S0-8 surface mount plastic package. It operates over the 150 - 960 MHz frequency range, and at 900 MHz it produces +23 dBm of saturated output power, has 30 dB of small signal gain and a 50 dB power control range. The amplifier has a wellmatched input, and an open collector output which provides good linearity and efficiency and is easy to externally match to 50 Ω for optimal power output. This device is well suited as a driver amplifier for European GSM (Global System for Mobile communications) portable and mobile telephone systems, or as the output stage for other low cost applications such as 900 MHz ISM band spread-spectrum. The HPMX-3002 is fabricated with Hewlett-Packard’s 15 GHz ft ISOSAT-II process, which combines stepper lithography, ion implantation, self-alignment techniques, and gold metallization to produce RFICs with superior performance, uniformity and reliability . Pin Configuration Applications Driver Amplifier for GSM Cellular Handsets Driver or Output Stage for 900 MHz ISM Band Transmitters Driver or Output Sta...