Flash Memory. Am29LV320B Datasheet

Am29LV320B Memory. Datasheet pdf. Equivalent

Am29LV320B Datasheet
Recommendation Am29LV320B Datasheet
Part Am29LV320B
Description 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
Feature Am29LV320B; DATASHEET Am29LV320MT/B 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector .
Manufacture Advanced Micro Devices
Download Am29LV320B Datasheet

Advanced Micro Devices Am29LV320B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit
3.0 Volt-only Boot Sector Flash Memory
Single power supply operation
— 3 V for read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
SecSi(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— Sixty-three 32 Kword/64-Kbyte sectors
— Eight 4 Kword/8 Kbyte boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
Low power consumption (typical values at 3.0 V, 5
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 48-pin TSOP
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 26518 Rev: B Amendment/0
Issue Date: May 16, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.

Advanced Micro Devices Am29LV320B
The Am29LV320M/TB is a 32 Mbit, 3.0 volt single
power supply flash memory device organized as
2,097,152 words or 4,194,304 bytes. The device has
an 8-bit/16-bit bus and can be programmed either in
the host system or in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (VCC) and an I/O voltage range (VIO), as
specified in the Product Selector Guide and the Order-
ing Information sections. The device is offered in a
48-pin TSOP, 48-ball Fine-pitch BGA or 64-ball Forti-
fied BGA package. Each device has separate chip en-
able (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a VCC input, a high-voltage accelerated program
(ACC) function provides shorter programming times
through increased current on the WP#/ACC input. This
feature is intended to facilitate factory throughput dur-
ing system production, but may also be used in the
field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to deter-
mine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a
given sector to read or program any other sector and
then complete the erase operation. The Program
Suspend/Program Resume feature enables the host
system to pause a program operation in a given sector
to read any other sector and then complete the pro-
gram operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The Write Protect (WP#) feature protects the top or
bottom two sectors by asserting a logic low on the
WP#/ACC pin. The protected sector will still be pro-
tected even during accelerated programming.
The SecSi(Secured Silicon) Sector provides a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
May 16, 2003

Advanced Micro Devices Am29LV320B
Sector Architecture
Uniform (64 Kbyte)
Boot (8 x 8 Kbyte
at top & bottom)
Uniform (64 Kbyte)
40-pin TSOP (std. & rev. pinout),
48-ball FBGA
Yes Yes
ACC only
WP# Protection
No WP#
48-pin TSOP, 48-ball Fine-pitch BGA,
64-ball Fortified BGA
WP#/ACC pin
2 x 8 Kbyte
top or bottom
56-pin TSOP (std. & rev. pinout),
64-ball Fortified BGA
WP#/ACC pin
1 x 64 Kbyte
high or low
To download related documents, click on the following
links or go to www.amd.comFlash MemoryProd-
uct InformationMirrorBitFlash InformationTech-
nical Documentation.
MirrorBit™ Flash Memory Write Buffer Programming
and Page Buffer Read
Implementing a Common Layout for AMD MirrorBit
and Intel StrataFlash Memory Devices
Migrating from Single-byte to Three-byte Device IDs
AMD MirrorBit™ White Paper
May 16, 2003

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