HM1-6514S-9

HM-6514 March 1997 1024 x 4 CMOS RAM Description The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature. Features Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min TTL Compatible Input/Output Common Data Input/Output Three-State Output Standard JEDEC Pinout Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max 18 Pin Package for High Density On-Chip Address Register Gated Inputs - No Pull Up or Pull Down Resistors Required Ordering Information 120ns HM3-6514S-9 HM1-6514S-9 24502BVA 8102402VA 200ns HM3-6514B-9 HM1-6514B-9 8102404VA 300ns HM3-6514-9 HM1-6514-9 8102406VA HM4-6514-B TEMPERATURE RANGE -40oC to +85oC -40oC to +85oC -40oC to +85oC -55oC to +125oC PACKAGE PDIP CERDIP JAN# SMD# ...