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HM3-6514-9 Datasheet, Equivalent, CMOS RAM.1024 x 4 CMOS RAM 1024 x 4 CMOS RAM |
| Part | HM3-6514-9 |
|---|---|
| Description | 1024 x 4 CMOS RAM |
| Feature | HM-6514
March 1997
1024 x 4 CMOS RAM
De scription
The HM-6514 is a 1024 x 4 sta tic CMOS RAM fabricated using self-alig ned silicon gate technology. The device utilizes synchronous circuitry to achi eve high performance and low power oper ation. On-chip latches are provided for addresses allowing efficient interfac ing with microprocessor systems. The da ta output can be forced to a high imped ance state for use in expanded memory a rrays. Gated inputs allow lower operati ng current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in . |
| Manufacture | Intersil Corporation |
| Datasheet |
| Part | HM3-6514-9 |
|---|---|
| Description | 1024 x 4 CMOS RAM |
| Feature | HM-6514
March 1997
1024 x 4 CMOS RAM
De scription
The HM-6514 is a 1024 x 4 sta tic CMOS RAM fabricated using self-alig ned silicon gate technology. The device utilizes synchronous circuitry to achi eve high performance and low power oper ation. On-chip latches are provided for addresses allowing efficient interfac ing with microprocessor systems. The da ta output can be forced to a high imped ance state for use in expanded memory a rrays. Gated inputs allow lower operati ng current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in . |
| Manufacture | Intersil Corporation |
| Datasheet |
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