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HM3-6514B-9 Datasheet, Equivalent, CMOS RAM.

1024 x 4 CMOS RAM

1024 x 4 CMOS RAM

 

 

 

Part HM3-6514B-9
Description 1024 x 4 CMOS RAM
Feature HM-6514 March 1997 1024 x 4 CMOS RAM De scription The HM-6514 is a 1024 x 4 sta tic CMOS RAM fabricated using self-alig ned silicon gate technology. The device utilizes synchronous circuitry to achi eve high performance and low power oper ation. On-chip latches are provided for addresses allowing efficient interfac ing with microprocessor systems. The da ta output can be forced to a high imped ance state for use in expanded memory a rrays. Gated inputs allow lower operati ng current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in .
Manufacture Intersil Corporation
Datasheet
Download HM3-6514B-9 Datasheet
Part HM3-6514B-9
Description 1024 x 4 CMOS RAM
Feature HM-6514 March 1997 1024 x 4 CMOS RAM De scription The HM-6514 is a 1024 x 4 sta tic CMOS RAM fabricated using self-alig ned silicon gate technology. The device utilizes synchronous circuitry to achi eve high performance and low power oper ation. On-chip latches are provided for addresses allowing efficient interfac ing with microprocessor systems. The da ta output can be forced to a high imped ance state for use in expanded memory a rrays. Gated inputs allow lower operati ng current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in .
Manufacture Intersil Corporation
Datasheet
Download HM3-6514B-9 Datasheet

HM3-6514B-9

HM3-6514B-9
HM3-6514B-9

HM3-6514B-9

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