| DatasheetsPDF.com |
HM3-6514B-9 Datasheet, Equivalent, CMOS RAM.1024 x 4 CMOS RAM 1024 x 4 CMOS RAM |
| Part | HM3-6514B-9 |
|---|---|
| Description | 1024 x 4 CMOS RAM |
| Feature | HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in. |
| Manufacture | Intersil Corporation |
| Datasheet |
| Part | HM3-6514B-9 |
|---|---|
| Description | 1024 x 4 CMOS RAM |
| Feature | HM-6514
March 1997
1024 x 4 CMOS RAM
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in. |
| Manufacture | Intersil Corporation |
| Datasheet |
|
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |