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PC/100 SDRAM. HM5212325F-B60 Datasheet |
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![]() HM5212325F-B60
128M LVTTL interface SDRAM
100 MHz
1-Mword × 32-bit × 4-bank
PC/100 SDRAM
ADE-203-1053A (Z)
Rev. 1.0
Oct. 18, 1999
Description
The Hitachi HM5212325F is a 128-Mbit SDRAM organized as 1048576-word × 32-bit × 4-bank. All inputs
and outputs are referred to the rising edge of the clock input. It is packaged in standard 108 bump BGA.
Features
• Single chip wide bit solution (× 32)
• 3.3 V power supply
• Clock frequency: 100 MHz (max)
• LVTTL interface
• Extremely small foot print: 1.27 mm pitch
Package: BGA (BP-108)
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 4/8/full page
• 2 variations of burst sequence
Sequential (BL = 4/8/full page)
Interleave (BL = 4/8)
• Programmable CAS latency: 2/3
• Byte control by DQMB
• Refresh cycles: 4096 refresh cycles/64 ms
• 2 variations of refresh
Auto refresh
Self refresh
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![]() HM5212325F-B60
• Full page burst length capability
Sequential burst
Burst stop capability
Ordering Information
Type No.
Frequency
CAS latency
HM5212325FBP-B60*
100 MHz
3
Note: 66 MHz operation at CAS latency = 2.
Package
14 mm × 22 mm 108 bump BGA (BP-108)
2
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![]() Pin Arrangement
HM5212325F-B60
108-bump BGA
12
A DQ31 NC
34 5 67
NC DQ24 VSS DQ23 NC
89
NC DQ16
B DQ30 NC NC DQ25 VCC DQ22 NC NC DQ17
C DQ29 NC
NC DQ26 VCC DQ21 NC
NC DQ18
D DQ28 NC
E
DQ
MB3
NC
NC DQ27 VSS DQ20 NC NC DQ19
DQ
MB2
NC
F CKE VCC
RAS WE
G A12 VCC
A10 A13
H A7 A5
VCC A1
J A4 VSS
A2 A3
K A8 A6
VSS A0
L A11 VSS
A9 CS
M Open CLK
VCC CAS
N
NC
DQ
MB0
NC
DQ
MB1
P DQ3 NC NC DQ4 VSS DQ11 NC NC DQ12
R DQ2 NC NC DQ5 VCC DQ10 NC NC DQ13
T DQ1 NC NC DQ6 VCC DQ9 NC NC DQ14
U DQ0 NC NC DQ7 VSS DQ8 NC NC DQ15
(Top view)
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