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PC/100 SDRAM. HM5225165B-B6 Datasheet

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PC/100 SDRAM. HM5225165B-B6 Datasheet
















HM5225165B-B6 SDRAM. Datasheet pdf. Equivalent













Part

HM5225165B-B6

Description

256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM



Feature


HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interfac e SDRAM 133 MHz/100 MHz 4-Mword × 16-b it × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, P C/100 SDRAM E0082H10 (1st edition) (Pr evious ADE-203-1073B (Z)) Jan. 31, 2001 Description The HM5225165B is a 256-Mb it SDRAM organized as 4194304-word × 1 6-bit × 4 bank. The HM522.
Manufacture

Elpida Memory

Datasheet
Download HM5225165B-B6 Datasheet


Elpida Memory HM5225165B-B6

HM5225165B-B6; 5805B is a 256-Mbit SDRAM organized as 8 388608-word × 8-bit × 4 bank. The HM5 225405B is a 256-Mbit SDRAM organized a s 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSO P II. Features • • • • • • • • 3.3 V power supply Clock frequ ency: 133 MHz/100 MHz (max) LVTTL inte.


Elpida Memory HM5225165B-B6

rface Single pulsed RAS 4 banks can oper ate simultaneously and independently Bu rst read/write operation and burst read /single write operation capability Prog rammable burst length: 1/2/4/8 2 variat ions of burst sequence  Sequential ( BL = 1/2/4/8)  Interleave (BL = 1/2/ 4/8) • Programmable CAS latency: 2/3 Elpida Memory, Inc. is a joint venture DRAM company of NEC Cor.


Elpida Memory HM5225165B-B6

poration and Hitachi, Ltd. HM5225165B/H M5225805B/HM5225405B-75/A6/B6 • Byte control by DQM : DQM (HM5225805B/HM5225 405B) : DQMU/DQML (HM5225165B) • Refr esh cycles: 8192 refresh cycles/64 ms 2 variations of refresh  Auto ref resh  Self refresh Ordering Informa tion Type No. HM5225165BTT-75* HM522516 5BTT-A6 HM5225165BTT-B6* 2 HM5225165BLT T-75* 1 HM5225165BLTT-A6 HM5.





Part

HM5225165B-B6

Description

256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM



Feature


HM5225165B-75/A6/B6 HM5225805B-75/A6/B6 HM5225405B-75/A6/B6 256M LVTTL interfac e SDRAM 133 MHz/100 MHz 4-Mword × 16-b it × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, P C/100 SDRAM E0082H10 (1st edition) (Pr evious ADE-203-1073B (Z)) Jan. 31, 2001 Description The HM5225165B is a 256-Mb it SDRAM organized as 4194304-word × 1 6-bit × 4 bank. The HM522.
Manufacture

Elpida Memory

Datasheet
Download HM5225165B-B6 Datasheet




 HM5225165B-B6
HM5225165B-75/A6/B6
HM5225805B-75/A6/B6
HM5225405B-75/A6/B6
256M LVTTL interface SDRAM
133 MHz/100 MHz
4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank
/16-Mword × 4-bit × 4-bank
PC/133, PC/100 SDRAM
E0082H10 (1st edition)
(Previous ADE-203-1073B (Z))
Jan. 31, 2001
Description
The HM5225165B is a 256-Mbit SDRAM organized as 4194304-word × 16-bit × 4 bank. The HM5225805B
is a 256-Mbit SDRAM organized as 8388608-word × 8-bit × 4 bank. The HM5225405B is a 256-Mbit
SDRAM organized as 16777216-word × 4-bit × 4 bank. All inputs and outputs are referred to the rising edge
of the clock input. It is packaged in standard 54-pin plastic TSOP II.
Features
3.3 V power supply
Clock frequency: 133 MHz/100 MHz (max)
LVTTL interface
Single pulsed RAS
4 banks can operate simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential (BL = 1/2/4/8)
Interleave (BL = 1/2/4/8)
Programmable CAS latency: 2/3
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.




 HM5225165B-B6
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Byte control by DQM : DQM (HM5225805B/HM5225405B)
: DQMU/DQML (HM5225165B)
Refresh cycles: 8192 refresh cycles/64 ms
2 variations of refresh
Auto refresh
Self refresh
Ordering Information
Type No.
Frequency
CAS latency
HM5225165BTT-75*1
HM5225165BTT-A6
HM5225165BTT-B6*2
133 MHz
100 MHz
100 MHz
3
2/3
3
HM5225165BLTT-75*1
HM5225165BLTT-A6
HM5225165BLTT-B6*2
133 MHz
100 MHz
100 MHz
3
2/3
3
HM5225805BTT-75*1
HM5225805BTT-A6
HM5225805BTT-B6*2
133 MHz
100 MHz
100 MHz
3
2/3
3
HM5225805BLTT-75*1
HM5225805BLTT-A6
HM5225805BLTT-B6*2
133 MHz
100 MHz
100 MHz
3
2/3
3
HM5225405BTT-75*1
HM5225405BTT-A6
HM5225405BTT-B6*2
133 MHz
100 MHz
100 MHz
3
2/3
3
HM5225405BLTT-75*1
HM5225405BLTT-A6
HM5225405BLTT-B6*2
133 MHz
100 MHz
100 MHz
3
2/3
3
Notes: 1. 100 MHz operation at CAS latency = 2.
2. 66 MHz operation at CAS latency = 2.
Package
400-mil 54-pin plastic TSOP II (TTP-54D)
Data Sheet E0082H10
2




 HM5225165B-B6
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
Pin Arrangement (HM5225165B)
VCC
DQ0
VCCQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VCCQ
DQ5
DQ6
VSSQ
DQ7
VCC
DQML
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VCC
54-pin TSOP
1 54
2 53
3 52
4 51
5 50
6 49
7 48
8 47
9 46
10 45
11 44
12 43
13 42
14 41
15 40
16 39
17 38
18 37
19 36
20 35
21 34
22 33
23 32
24 31
25 30
26 29
27 28
(Top view)
VSS
DQ15
VSSQ
DQ14
DQ13
VCCQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VCCQ
DQ8
VSS
NC
DQMU
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Pin Description
Pin name
Function
A0 to A12,
BA0, BA1
Address input
Row address
A0 to A12
Column address
A0 to A8
Bank select address BA0/BA1 (BS)
DQ0 to DQ15 Data-input/output
CS Chip select
RAS
Row address strobe command
CAS
Column address strobe command
Pin name
WE
Function
Write enable
DQMU/DQML Input/output mask
CLK Clock input
CKE
Clock enable
VCC
VSS
VCCQ
VSSQ
NC
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Data Sheet E0082H10
3




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